參數(shù)資料
型號(hào)： M25PE80-VMP6T
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 23/43頁(yè)
文件大小： 599K
代理商： M25PE80-VMP6T
23/43
M25PE80
Write to Lock Register (WRLR)
The Write to Lock Register (WRLR) instruction al-
lows bits to be changed in the Lock Registers. Be-
fore it can be accepted, a Write Enable (WREN)
instruction must previously have been executed.
After the Write Enable (WREN) instruction has
been decoded, the device sets the Write Enable
Latch (WEL).
The Write to Lock Register (WRLR) instruction is
entered by driving Chip Select (S) Low, followed
by the instruction code, three address Bytes
(pointing to any address in the targeted sector/
sub-sector) and one data Byte on Serial Data Input
(D).
The instruction sequence is shown in
Figure 17.
Chip Select (S) must be driven High after the
eighth bit of the data Byte has been latched in, oth-
erwise the Write to Lock Register (WRLR) instruc-
tion is not executed.
When the Write to Lock Register (WRLR) instruc-
tion has been successfully executed, the Write En-
able Latch (WEL) bit is reset after a delay time less
than t
SHSL
minimum value.
Any Write to Lock Register (WRLR) instruction,
while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on
the cycle that is in progress.
Figure 17. Write to Lock Register (WRLR) Instruction Sequence
Table 9. Lock Register In
Note: 1. b6-b4 and b1-b0 must be reset to ‘0’.
2. b6-b2 must be reset to ‘0’.
Sector
Bit
Value
All Sectors Except for Sector 0
and Sector 15
b7-b2
‘0’
b1
Sector Lock Down Bit Value (refer to
Table 8.
)
b0
Sector Write Lock Bit Value (refer to
Table 8.
)
Sector 0
Sector 15
b7
‘1’
Only b3 and b2 are taken into account to modify the sub-
sector Write Lock and Lock Down bits
(1)
‘0’
Only b1 and b0 are taken into account to modify the sector
Write Lock and Lock Down bits
(2)
b3
Sub-sector Lock Down Bit value (refer to
Table 8.
)
b2
Sub-sector Write Lock Bit Value (refer to
Table 8.
)
b1
Sector Lock Down Bit Value (refer to
Table 8.
)
b0
Sector Write Lock Bit Value (refer to
Table 8.
)
AI10784
C
D
S
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
Instruction
24-Bit Address
0
7
6
5
4
3
2
0
1
Lock Register
In
39
MSB
MSB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE80-VMP6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMP6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMS6G 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin QFN Tray
M25PE80-VMS6P 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMS6TG 功能描述:IC FLASH 8MBIT 75MHZ 8QFN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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