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參數(shù)資料
| 型號： | M25PE80-VMP6T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 25/43頁 |
| 文件大小： | 599K |
| 代理商： | M25PE80-VMP6T |
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M25PE80
Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all
bits inside the chosen page. Before it can be ac-
cepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write
Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL).
The Page Erase (PE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address Bytes on Serial
Data Input (D). Any address inside the Page is a
valid address for the Page Erase (PE) instruction.
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Figure 18.
.
Chip Select (S) must be driven High after the
eighth bit of the last address Byte has been
latched in, otherwise the Page Erase (PE) instruc-
tion is not executed. As soon as Chip Select (S) is
driven High, the self-timed Page Erase cycle
(whose duration is t
PE
) is initiated. While the Page
Erase cycle is in progress, the Status Register
may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Page Erase cycle, and
is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable
Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page
that is Hardware or software Protected is not exe-
cuted.
Any Page Erase (PE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 18. Page Erase (PE)
Instruction Sequence
Note: Address bits A23 to A19 are Don’t Care.
24 Bit Address
C
D
AI04046
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE80-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMP6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMP6TG | 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMS6G | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin QFN Tray |
| M25PE80-VMS6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMS6TG | 功能描述:IC FLASH 8MBIT 75MHZ 8QFN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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