參數(shù)資料
型號: M29W800T100M1R
廠商: 意法半導體
英文描述: Low-Power Configurable Multiple-Function Gate 6-SOT -40 to 85
中文描述: 8兆1兆x8或512KB的x16插槽,引導塊低壓單電源閃存
文件頁數(shù): 17/33頁
文件大小: 233K
代理商: M29W800T100M1R
Symbol
Alt
Parameter
Test
Condition
M29W800T / M29W800B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
C
L
= 100pF
V
CC
= 2.7V to 3.6V
C
L
= 100pF
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next
Address Valid
E = V
IL
,
G = V
IL
120
150
ns
t
AVQV
t
ACC
Address Valid to Output
Valid
E = V
IL
,
G = V
IL
120
150
ns
t
ELQX(1)
t
LZ
Chip Enable Low to
Output Transition
G = V
IL
0
0
ns
t
ELQV(2)
t
CE
Chip Enable Low to
Output Valid
G = V
IL
120
150
ns
t
GLQX(1)
t
OLZ
Output Enable Low to
Output Transition
E = V
IL
0
0
ns
t
GLQV(2)
t
OE
Output Enable Low to
Output Valid
E = V
IL
50
55
ns
t
EHQX
t
OH
Chip Enable High to
Output Transition
G = V
IL
0
0
ns
t
EHQZ(1)
t
HZ
Chip Enable High to
Output Hi-Z
G = V
IL
30
40
ns
t
GHQX
t
OH
Output Enable High to
Output Transition
E = V
IL
0
0
ns
t
GHQZ(1)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
30
40
ns
t
AXQX
t
OH
Address Transitionto
Output Transition
E = V
IL
,
G = V
IL
0
0
ns
t
PLYH(1,3)
t
RRB
t
READY
RP Low to Read Mode
10
10
μ
s
t
PHEL
t
RH
RP High to Chip Enable
Low
50
50
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
ELBL
t
ELBH
t
ELFL
t
ELFH
Chip Enable toBYTE
Switching Low orHigh
5
5
ns
t
BLQZ
t
FLQZ
BYTE Switching Low to
Output High Z
60
60
ns
t
BHQV
t
FHQV
BYTE Switching High to
Output Valid
60
60
ns
Notes:
1. Sampled only,not 100% tested.
2. G may be delayed by up to t
- t
afterthe falling edge of E withoutincreasing t
.
3. Tobe considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Table14B. Read AC Characteristics
(T
A
= 0 to 70
°
C, –20 to 85
°
C or–40 to 85
°
C)
17/33
M29W800T M29W800B
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