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參數(shù)資料
| 型號(hào)： | M36DR432AD10ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | PS MEDICAL SWITCHING 24V 1.7A |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位的256Kb x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 27/52頁(yè) |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432AD10ZA6T |
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M36DR432AD, M36DR432BD
Table 16. Flash DC Characteristics
Note: 1. Sampled only, not 100% tested.
2. V
PPF
may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation V
PPF
is don’t care.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DD
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DD
±5
μA
I
CC1
Supply Current
(Read Mode)
EF = V
IL
, GF = V
IH
, f =
6MHz
3
6
mA
I
CC2
Supply Current
(Power-Down)
RPF = V
SS
± 0.2V
2
10
μA
I
CC3
Supply Current (Standby)
EF = V
DD
± 0.2V
10
50
μA
I
CC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
I
CC5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Read in the
other Bank
13
26
mA
I
PPF1
V
PPF
Supply Current
(Program or Erase)
V
PPF
= 12V ± 0.6V
2
5
mA
I
PPF2
V
PPF
Supply Current
(Standby or Read)
V
PPF
≤
V
DD
0.2
5
μA
V
PPF
= 12V ± 0.6V
100
400
μA
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DD
– 0.4
V
DD
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
CMOS
I
OH
= –100μA
V
DD
–0.1
V
V
PPF(2,3)
V
PPF
Supply Voltage
(Program or Erase)
–0.4
V
DD
+ 0.4
V
Double Word Program
11.4
12.6
V
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相關(guān)代理商/技術(shù)參數(shù) |
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| M36DR432AD12ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
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| M36DR432ADZA | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432AZA | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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