參數(shù)資料
型號: M36DR432AZA
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁閃存和4兆位256K x16的SRAM,多個存儲產(chǎn)品
文件頁數(shù): 34/52頁
文件大?。?/td> 834K
代理商: M36DR432AZA
M36DR432AD, M36DR432BD
34/52
Figure 12. Flash Reset/Power-Down AC Waveform
Table 21. Flash Reset/Power-Down AC Characteristics
Symbol
Alt
Parameter
Test Condition
M36DR432AD, M36DR432BD
Unit
85
100
120
Min
Max
Min
Max
Min
Max
t
PHQ7V1
RPF High to Data Valid
(Read Mode)
150
150
150
ns
t
PHQ7V2
RPF High to Data Valid
(Reset/Power-Down
enabled)
50
50
50
μs
t
PLQ7V
RPF Low to Reset
Complete
During Program
10
10
10
μs
During Erase
20
20
20
μs
t
PLPH
t
RP
RPF Pulse Width
50
50
50
ns
AI07316
DQ7
WF
RPF
tPLPH
tPHQ7V
VALID
READ
DQ7
VALID
tPLQ7V
PROGRAM / ERASE
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M36DR432B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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M36DR432B100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B120ZA6C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B120ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product