參數(shù)資料
型號(hào): M36DR432AZA
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,雙行,頁(yè)閃存和4兆位256K x16的SRAM,多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù): 51/52頁(yè)
文件大?。?/td> 834K
代理商: M36DR432AZA
51/52
M36DR432AD, M36DR432BD
REVISION HISTORY
Table 36. Document Revision History
Date
Version
Revision Details
15-Jan-2003
1.0
First issue.
15-Jan-2003
1.1
Bottom Device Code corrected on page 1.
25-Feb-2003
2.0
Document promoted from Preliminary Data to full Datasheet status.
28-Feb-2003
2.1
V
DDQF
signal removed from datasheet. SRAM Input Rise and Fall Times added to,
and V
DDF
and V
DDS
parameters differentiated in Table 14, Operating and AC
Measurement Conditions. V
DDS
added to the SIGNAL DESCRIPTIONS section.
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M36DR432B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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M36DR432B100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B120ZA6C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B120ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product