參數(shù)資料
型號(hào)： M36DR432BD
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位的256Kb x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù)： 12/52頁(yè)
文件大?。?/td> 834K
代理商： M36DR432BD
M36DR432AD, M36DR432BD
12/52
FLASH MEMORY COMPONENT
The Flash Memory is a 32 Mbit (2Mbit x16) non-
volatile Flash memory that may be erased electri-
cally at block level and programmed in-system on
a Word-by-Word basis using a 1.65V to 2.2V V
DDF
supply for the circuitry and a 1.65V to 2.2V V
DDQF
supply for the Input/Output pins (in the stacked de-
vice, V
DDF
and V
DDQF
are tied internally). An op-
tional 12V V
PPF
power supply is provided to speed
up customer programming.
The Flash device features an asymmetrical block
architecture with an array of 71 blocks divided into
two banks, Banks A and B, providing Dual Bank
operations. While programming or erasing in Bank
A, read operations are possible in Bank B or vice
versa. Only one bank at a time is allowed to be in
program or erase mode. The bank architecture is
summarized in Table 3, and the Block Addresses
are shown in Appendix A. The Parameter Blocks
are located at the top of the memory address
space for the M36DR432AD and, at the bottom for
the M36DR432BD.
Each block can be erased separately. Erase can
be suspended, in order to perform either read or
program in any other block, and then resumed.
Each block can be programmed and erased over
100,000 cycles.
Program and Erase commands are written to the
Command Interface of the memory. An internal
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified in the
Status Register. The command set required to
control the memory is consistent with JEDEC stan-
dards.
The Flash memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have two
levels of protection. They can be individually
locked and locked-down preventing any acciden-
tal programming or erasure. All blocks are locked
at Power Up and Reset.
The device includes a 128 bit Protection Register
and a Security Block to increase the protection of
a system’s design. The Protection Register is di-
vided into two 64 bit segments. The first segment
contains a unique device number written by ST,
while the second one is one-time-programmable
by the user. The user programmable segment can
be permanently protected. The Security Block, pa-
rameter block 0, can be permanently protected by
the user. Figure 5, shows the Flash Security Block
and Protection Register Memory Map.
Table 3. Flash Bank Architecture
Bank Size
Parameter Blocks
Main Blocks
Bank A
4 Mbits
8 blocks of 4 KWords
7 blocks of 32 KWords
Bank B
28 Mbits
-
56 blocks of 32 KWords
相關(guān)PDF資料
PDF描述
M36DR432B120ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432B100ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432BDZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36L0R7050B0 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36DR432BD10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BD12ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BD85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BDZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*