- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359056 > M36DR432BD (意法半導(dǎo)體) 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product PDF資料下載
參數(shù)資料
| 型號(hào)： | M36DR432BD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位的256Kb x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁數(shù)： | 49/52頁 |
| 文件大小： | 834K |
| 代理商： | M36DR432BD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁當(dāng)前第49頁第50頁第51頁第52頁
49/52
M36DR432AD, M36DR432BD
Table 34. CFI Query System Interface Information
Offset
Data
Description
1Bh
0017h
V
DDF
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Ch
0022h
V
DDF
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Dh
0000h
V
PPF
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PPF
pin is present
1Eh
00C0h
V
PPF
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PPF
pin is present
1Fh
0004h
Typical timeout per single byte/word program (multi-byte program count = 1), 2
n
μs
(if supported; 0000h = not supported)
20h
0003h
Typical timeout for maximum-size multi-byte program or page write, 2
n
μs
(if supported; 0000h = not supported)
21h
000Ah
Typical timeout per individual block erase, 2
n
ms
(if supported; 0000h = not supported)
22h
0000h
Typical timeout for full chip erase, 2
n
ms
(if supported; 0000h = not supported)
23h
0003h
Maximum timeout for byte/word program, 2
n
times typical (offset 1Fh)
(0000h = not supported)
24h
0004h
Maximum timeout for multi-byte program or page write, 2
n
times typical (offset 20h)
(0000h = not supported)
25h
0002h
Maximum timeout per individual block erase, 2
n
times typical (offset 21h)
(0000h = not supported)
26h
0000h
Maximum timeout for chip erase, 2
n
times typical (offset 22h)
(0000h = not supported)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36DR432B120ZA6T | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B100ZA6T | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432BDZA | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432B | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36L0R7050B0 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432BD10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BD12ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BD85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BDZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。