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參數(shù)資料
| 型號： | M36DR432BD |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位的256Kb x16的SRAM，多個存儲產品 |
| 文件頁數(shù)： | 26/52頁 |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432BD |
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M36DR432AD, M36DR432BD
26/52
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 14, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 14. Operating and AC Measurement Conditions
Note: 1. V
DD
= V
DDS
= V
DDF
Figure 6. AC Measurement I/O Waveform
Note: V
DD
means V
DDF
= V
DDS
Figure 7. AC Measurement Load Circuit
Note: V
DD
means V
DDF
= V
DDS
Table 15. Device Capacitance
Symbol
Note: Sampled only, not 100% tested.
SRAM
Flash
Parameter
70
85
100, 120
Units
Min
Max
Min
Max
Min
Max
V
DDF
Supply Voltage
-
-
1.8
2.2
1.65
2.2
V
V
DDS
Supply Voltage
1.65
2.2
-
-
-
-
V
V
PPF
Supply Voltage
11.4
12.6
11.4
12.6
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
30
5
30
30
pF
Input Rise and Fall Times
2
4
4
ns
Input Pulse Voltages
(1)
0 to V
DD
0 to V
DD
0 to V
DD
V
Input and Output Timing Ref. Voltages
(1)
V
DD
/2
V
DD
/2
V
DD
/2
V
AI90206
VDD
0V
VDD/2
AI90207
CL = 50pF
CL includes JIG capacitance
DEVICE
UNDER
TEST
25k
VDD
25k
VDD
0.1μF
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
15
pF
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相關代理商/技術參數(shù) |
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| M36DR432BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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