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參數資料
| 型號： | M36DR432BD |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位的256Kb x16的SRAM，多個存儲產品 |
| 文件頁數： | 50/52頁 |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432BD |
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M36DR432AD, M36DR432BD
50/52
Table 35. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h
Device Size = 2
n
in number of bytes
28h
29h
2Ah
2Bh
2Ch
0001h
0000h
0000h
0000h
0002h
Flash Device Interface Code description: Asynchronous x16
Maximum number of bytes in multi-byte program or page = 2
n
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size. For example, a 128KB device
(1Mb) having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is
considered to have 5 Erase Block Regions. Even though two regions both
contain 16KB blocks, the fact that they are not contiguous means they are
separate Erase Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
Erase Block Region Information
M36DR432AD
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
M36DR432AD
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
M36DR432AD
003Eh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
M36DR432AD
0007h
0000h
0020h
0000h
003Eh
0000h
0000h
0001h
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes
in size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g.
y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
Note: y = 0 value must be used with number of block regions of one as indicated
by (x) = 0
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PDF描述 |
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| M36DR432B120ZA6T | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B100ZA6T | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432BDZA | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432B | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M36DR432BD10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BD12ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BD85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BDZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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