參數(shù)資料
型號(hào): M36P0R9070E0ZACF
廠商: 意法半導(dǎo)體
英文描述: 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述: 512兆位(x16插槽,多銀行,多層次,多突發(fā))128兆位閃存(突發(fā))移動(dòng)存儲(chǔ)芯片,1.8V電源,多芯片封裝
文件頁(yè)數(shù): 13/26頁(yè)
文件大?。?/td> 200K
代理商: M36P0R9070E0ZACF
M36P0R9070E0
2 Signal descriptions
13/26
2.22 V
SS
Ground
V
SS
is the common ground reference for all voltage measurements in the Flash (core and I/O
Buffers) and PSRAM chips. It must be connected to the system ground.
Note:
Each Flash memory device in a system should have their supply voltage (V
DDF
) and the
program supply voltage V
PPF
decoupled with a 0.1μF ceramic capacitor close to the pin (high
frequency, inherently low inductance capacitors should be as close as possible to the package).
See
Figure 4., AC Measurement Load Circuit
. The PCB track widths should be sufficient to
carry the required V
PPF
program and erase currents
.
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