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參數(shù)資料
| 型號(hào)： | M36P0R9070E0ZACF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 512兆位（x16插槽，多銀行，多層次，多突發(fā)）128兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝 |
| 文件頁數(shù)： | 17/26頁 |
| 文件大小： | 200K |
| 代理商： | M36P0R9070E0ZACF |
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M36P0R9070E0
5 DC and AC parameters
17/26
5
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 5., Operating and AC Measurement Conditions
. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the quoted
parameters.
Table 5.
Operating and AC Measurement Conditions
Figure 3.
AC Measurement I/O Waveform
Parameter
Flash Memory
PSRAM
Unit
Min
Max
Min
Max
V
CCP
Supply Voltage
1.7
1.95
1.7
1.95
V
V
DDF
Supply Voltage
1.7
1.95
1.7
1.95
V
V
DDQ
Supply Voltage
1.7
1.95
1.7
1.95
V
V
PPF
Supply Voltage (Factory environment)
8.5
9.5
–
–
V
V
PPF
Supply Voltage (Application environment)
–0.4
V
DDQ
+0.4
–
–
V
Ambient Operating Temperature
–30
85
–30
85
°C
Load Capacitance (C
L
)
30
30
pF
Impedance Output (Z
0
)
50
Output Circuit Protection Resistance (R)
50
Input Rise and Fall Times
3
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDQ
/2
V
AI06161
VDDQ
0V
VDDQ/2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36P0R9070E1ZACE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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