參數(shù)資料
型號: M36P0R9070E0ZACF
廠商: 意法半導體
英文描述: 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述: 512兆位(x16插槽,多銀行,多層次,多突發(fā))128兆位閃存(突發(fā))移動存儲芯片,1.8V電源,多芯片封裝
文件頁數(shù): 5/26頁
文件大?。?/td> 200K
代理商: M36P0R9070E0ZACF
M36P0R9070E0
5/26
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
TFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Functional Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Measurement I/O Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
TFBGA107 8x11mm - 9x12 active ball array, 0.8mm pitch, package outline. . . . . . . . . . . 22
相關(guān)PDF資料
PDF描述
M36W0R6030B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQE 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030B0ZAQT 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
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