參數(shù)資料
型號: M36P0R9070E0ZACF
廠商: 意法半導(dǎo)體
英文描述: 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述: 512兆位(x16插槽,多銀行,多層次,多突發(fā))128兆位閃存(突發(fā))移動存儲芯片,1.8V電源,多芯片封裝
文件頁數(shù): 6/26頁
文件大?。?/td> 200K
代理商: M36P0R9070E0ZACF
1 Summary description
M36P0R9070E0
6/26
1
Summary description
The M36P0R9070E0 combines two memory devices in one Multi-Chip Package:
512-Mbit Multiple Bank Flash memory (the M58PR512J).
128 Mbit PSRAM
(the M69KB128AA).
This datasheet should be read in conjunction with the M58PR512J and M69KB128AA
datasheets, which are available from
www.st.com
.
Recommended operating conditions do not allow more than one memory to be active at the
same time.
The memory is offered in a Stacked TFBGA107 package. It is supplied with all the bits erased
(set to ‘1’).
Table 1.
Logic Diagram
AI10845
25
A0-A24
E
F
G
F
W
F
RP
F
WP
F
L
DQ0-DQ15
V
DDQ
M36P0R9070E0
V
SS
16
V
DDF
DPD
F
E
P
G
P
W
P
CR
P
UB
P
LB
P
V
PPF
V
CCP
K
WAIT
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