參數(shù)資料
型號: M36P0R9070E0ZACF
廠商: 意法半導(dǎo)體
英文描述: 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
中文描述: 512兆位(x16插槽,多銀行,多層次,多突發(fā))128兆位閃存(突發(fā))移動存儲芯片,1.8V電源,多芯片封裝
文件頁數(shù): 7/26頁
文件大小: 200K
代理商: M36P0R9070E0ZACF
M36P0R9070E0
1 Summary description
7/26
Table 2.
A0-A24
(1)
Signal Names
Note: 1 A23-A24 are Address Inputs for the Flash memory component only.
Address Inputs
DQ0-DQ15
Common Data Input/Output
V
DDQ
Common Flash and PSRAM Power Supply for I/O Buffers
V
PPF
Flash Memory Optional Supply Voltage for Fast Program & Erase
V
DDF
Flash Memory Power Supply
V
CCP
PSRAM Power Supply
V
SS
Ground
L
Latch Enable input
K
Burst Clock
WAIT
Wait Output
NC
Not Connected Internally
DU
Do Not Use as Internally Connected
Flash Memory
E
F
Chip Enable input
G
F
Output Enable Input
W
F
Write Enable input
RP
F
Reset input
WP
F
Write Protect input
DPD
F
Deep Power-Down
PSRAM
E
P
Chip Enable Input
G
P
Output Enable Input
W
P
Write Enable Input
CR
P
Configuration Register Enable Input
UB
P
Upper Byte Enable Input
LB
P
Lower Byte Enable Input
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