參數(shù)資料
型號(hào): M39432
廠商: 意法半導(dǎo)體
英文描述: Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM)
中文描述: 單芯片的4Mb并行閃存和256Kbit EEPROM存儲(chǔ)器(單片4Mb的閃速和256Kb的并行的EEPROM)
文件頁(yè)數(shù): 10/30頁(yè)
文件大?。?/td> 247K
代理商: M39432
Write OTP Row
Writing (only one time) in the OTP row (64 bytes)
is enabled by an instruction. This instruction is
composed of three specific Write operations of data
bytes at three specific memory locations (each
location in a different page) followed by the the data
to store in the OTP row (refer to Table 4).
When accessing the OTP row, the only LSB ad-
dresses (A6 to A0) are decoded, with A6 = ’0’.
Write the EEPROM Block Identifier
The EEPROM block identifier can be written with a
single Write operation with specific logic levels
applied on A6 and the V
ID
level on A9 (see Table
7).
PROGRAM in the Flash BLOCK
It should be noted that writing data into the
EEPROM block and the Flash block is not per-
formed in a similar way: the Flash memory requires
an instruction (see Instruction chapter) for Erasing
and another instruction for Programming one (or
more) byte(s), the EEPROM memory is directly
written with a simple operation (see Operation
chapter).
Program Instuction.
During the execution of the
Program instruction, the Flash block memory will
not accept any further instructions.
The Flash block memory can be programmed byte-
by-byte. The program instruction is a sequence of
three specific Write operations followed by writing
the address and data byte to be programmed into
the Flash block memory (see Table 4). The M39432
automatically starts and performs the programming
after the fourth write operation.
During programming, the memory status may be
checked by reading the status bits DQ5, DQ6 and
DQ7, as detailed in the following sections.
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI01369
D=
DATA
YES
NO
YES
NO
DQ5
= 1
D=
DATA
YES
NO
Figure 6. Data Polling Flowchart
READ
DQ5 & DQ6
START
READ DQ6
FAIL
PASS
AI01370
D=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
D=
TOGGLE
Figure 7. Data Toggle Flowchart
10/30
M39432
相關(guān)PDF資料
PDF描述
M40Z111MH6 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
M40Z111MH6TR 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
M40Z111WMH6 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
M40Z111WMH6TR 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
M40Z111 NVRAM Controller for up to Two LPSRAM(NVRAM控制器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M39432-10VNC6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
M39432-10WNC6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
M39432-12VNC6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
M39432-12WNC6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
M39432-15VNC6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM