參數(shù)資料
型號: M39432
廠商: 意法半導體
英文描述: Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM)
中文描述: 單芯片的4Mb并行閃存和256Kbit EEPROM存儲器(單片4Mb的閃速和256Kb的并行的EEPROM)
文件頁數(shù): 25/30頁
文件大小: 247K
代理商: M39432
Symbol
Alt
Parameter
M39432
Unit
-120
-150
-200
-250
Min
Max
Min
Max
Min
Max
Min
Max
t
WHQ7V1
(2)
Write Enable High to DQ7
Valid (Program, W Controlled)
10
10
10
10
μ
s
t
WHQ7V2 (2)
Write Enable High to DQ7
Valid (Sector Erase, W
Controlled)
1.5
30
1.5
30
1.5
30
1.5
30
sec
t
EHQ7V1
(2)
Flash Block Enable High to
DQ7 Valid (Program, EF
Controlled)
10
10
10
10
μ
s
t
EHQ7V2
(2)
Flash Block Enable High to
DQ7 Valid (Sector Erase, EF
Controlled)
1.5
30
1.5
30
1.5
30
1.5
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data
Polling)
50
55
70
55
ns
t
WHQV1
Write Enable High to Output
Valid (Program)
10
10
10
10
μ
s
t
WHQV2
Write Enable High to Output
Valid (Sector Erase)
1.5
30
1.5
30
1.5
30
1.5
30
sec
t
EHQV1
Flash Block Enable High to
Output Valid (Program)
10
10
10
10
μ
s
t
EHQV2
Flash Block Enable High to
Output Valid (Sector Erase)
1.5
30
1.5
30
1.5
30
1.5
30
sec
Notes:
1. All other timings are defined in Read AC Characteristics table.
2. t
WHQ7V
is the Program or Erase time.
Table 16. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
0.3V)
Parameter
M39432
Unit
Min
Typ
Max
Chip Program (Byte)
8
sec
Chip Erase (Preprogrammed)
3
30
sec
Chip Erase
10
sec
Sector Erase (Preprogrammed)
1
30
sec
Sector Erase
2
sec
Byte Program
10
1200
μ
s
Program/Erase Cycles (per Sector)
100,000
cycles
Table 17. Program, Erase Times and Program, Erase Endurance Cycles (Flash Block)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
0.3V)
25/30
M39432
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