參數(shù)資料
型號(hào)： M39432
廠商： 意法半導(dǎo)體
英文描述： Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM)
中文描述： 單芯片的4Mb并行閃存和256Kbit EEPROM存儲(chǔ)器（單片4Mb的閃速和256Kb的并行的EEPROM）
文件頁數(shù)： 12/30頁
文件大?。?/td> 247K
代理商： M39432
EF
EE
G
W
A0
A1
A6
A9
A12
A16
A17
A18
DQ0 - DQ7
V
IL
V
IH
V
ID
V
IL
X
X
X
V
ID
X
SA
SA
SA
Protection Activation
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
ID
X
SA
SA
SA
Verify the protection status:
when DQ0= 1, the block is
protected
Notes:
X = Don’t care.
SA = Software Address.
Table 8. Flash Sector Protection
EF
EE
G
W
A0
A1
A6
A9
A12
A16
A17
A18
DQ0 - DQ7
V
ID
V
IH
V
ID
V
IL
X
X
X
V
ID
V
IH
V
IH
X
X
Activation of Unprotected
Mode
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
V
ID
X
SA
SA
SA
Verify the protection status:
when 00h, the block is
unprotected
Notes:
X = Don’t care.
SA = Software Address.
Table 9. Flash Unprotection
Erase Suspend Instruction.
When a Flash Sector
Erase operation is in progress, the Erase Suspend
instruction may suspend the operation by writing
B0h at any address (see Table 4). This allows
reading of data from another Flash sector while
erase is in progress. Erase suspend is accepted
only during the Flash Sector Erase instruction exe-
cution and defaults to read array mode. An Erase
Suspend instruction entered during an Erase
timeout will, in addition to suspending the erase,
terminates the timeout.
The Toggle bit DQ6 stops toggling when the
M39432 internal logic is suspended. The Toggle bit
status must be monitored at an address out of the
Flash sector being erased. Toggle bit will stop
toggling between 0.1
μ
s and 15
μ
s after the Erase
Suspend instruction has been written. The M39432
will then automatically be set into Read Flash Block
Memory Array mode.
When erase is suspended, Reading from Flash
sectors being erased will output invalid data, a
Read from Flash sector not being erased is valid.
During an Erase Suspend, the Flash memory will
respond only to Erase Resume and Reset instruc-
tions.
A Reset instruction will definitively abort erasure
and can leave invalid data in the Flash sectors
being erased.
Erase Resume Instruction.
If an Erase Suspend
instruction was previously executed, the erase op-
eration may be resumed by this instruction. The
Erase Resume instruction consists of writing 30h
at any address (see Table 4).
FLASH BLOCK SPECIFIC FEATURES
Flash Sector Protection.
Each Flash sector can
be separately protected against Program or Erase.
Flash Sector Protection provides additional data
security, as it disables all program or erase opera-
tions. This mode is activated when both A9 and G
are set to V
ID
(12V + 0.5V) and the Flash sector
address is applied on A16, A17 and A18, as shown
in Figure 8 and Table 8.
Flash sector protection is programmed with the
help of a specific sequence of levels applied on EF,
EE, G, A0, A1, A6, A9, A16, A17 and A18; this
sequence includes a verification of the Protection
status on DQ0 as shown in Table 8.
Any attempt to program or erase a protected Flash
sector will be ignored by the device.
Remarks:
– The Verify operation is a read with a simulated
worst case conditions. This allows a guarantee
of the retention of the Protection status
– During the application life, the Sector protection
status can be accessed with a regular Read
instruction without applying a "high voltage" V
ID
on A9. This instruction is detailed in Table 4.
Flash Sector Unprotection.
Flash sectors can be
unprotected to allow updating of their contents.
Note that the Sector Unprotection unprotects all
sectors (sector 0 up to sector 7).
Flash Sector Unprotection is activated with a spe-
cific sequence of levels applied on EF, EE, G, A0,
A1, A6, A9, A12, A16, A17 and A18; this sequence
includes a verification of the Protection status on
DQ0-DQ7 as shown in Figure 9 and Table 9.
12/30
M39432
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