參數(shù)資料
型號(hào): M5M29GB
廠商: Mitsubishi Electric Corporation
英文描述: 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述: 16,777,216位(1048,576字BY16位)的CMOS 3.3只,塊擦除閃存
文件頁數(shù): 5/23頁
文件大?。?/td> 200K
代理商: M5M29GB
MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
M 5 M 29G T 160B WG
Operating Voltage :
29G : 2.7 - 3.6V
Standard / BGO Type
29W : 1.65 - 2.2V
Standard / BGO Type
Boot Block :
T : Top Boot
B : Bottom Boot
Package :
VP : 48pin TSOP(I) 12mm x 20mm (Nomal Pinout)
WG: CSP Ball Pitch 0.75mm,6x8 array, 7mm x 8.5mm
Density/Write Protect/
Word Organizetion:
160B : 16M WP1#, x8/x16
161B : 16M WP1# & WP2#, x16
Mitsubishi 16M Flash Memory Type name
5
相關(guān)PDF資料
PDF描述
M5M417400CJ-5 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CJ-5S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CJ FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CTP-5 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CTP-5S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GB160BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BVP-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY