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參數(shù)資料
| 型號： | M5M29GB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 10/23頁 |
| 文件大?。?/td> | 200K |
| 代理商： | M5M29GB |
MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
10
CAPACITANCE
Symbol
Parameter
Test conditions
pF
pF
Unit
Max
8
12
Typ
Min
Limits
Ta = 25
°
C, f = 1MHz, V
in
= V
out
= 0V
Input capacitance (Address, Control Pins)
Output capacitance
C
IN
C
OUT
1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
on input/output pins is V
CC
+0.5V which, during transitions, may overshoot to V
CC
+1.5V for periods <20ns.
ABSOLUTE MAXIMUM RATINGS
Conditions
Parameter
With respect to Ground
Symbol
V
cc
V
I1
T
a
T
bs
T
stg
I
OUT
All input or output voltage except V
cc,
A9,RP#
Ambient temperature
Temperature under bias
Storage temperature
Output short circuit current
V
cc
voltage
1)
Unit
V
V
°
C
°
C
°
C
mA
Min
-0.2
-0.6
-40
Max
4.6
4.6
85
95
125
100
-50
-65
All currents are in RMS unless otherwise noted.
1) Typical values at Vcc=3.3V, Ta=25
C
2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than V
LKO.
If Vcc is less than V
LKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than V
LKO
, the alteration of memory contents
may occur.
DEVICE IDENTIFIER CODE
The upper data(D
15-8)
is "0".
Code
Manufacturer Code
Pins
Hex. Data
1CH
DQ
0
0
A
0
V
IL
DQ
1
0
DQ
2
1
DQ
3
1
DQ
4
1
DQ
5
DQ
6
0
DQ
7
0
Device Code (-T161BWG)
A0H
V
IH
0
0
1
Device Code (-B161BWG)
V
IH
1
0
0
1
1
0
0
0
0
0
0
0
A1H
0
1
DC ELECTRICAL CHARACTERISTICS
(Ta = -40~ 85
°
C, Vcc = 2.7V ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Max
±
1.0
Typ1)
Limits
Min
Test conditions
Unit
V
CC
standby current
I
LO
I
SB1
±
10
200
Output leakage current
μ
A
μ
A
0V
≤
V
OUT
≤
V
CC
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
I
LI
Input leakage current
μ
A
0V
≤
V
IN
≤
V
CC
V
CC
deep powerdown current
I
CC3
I
CC4
I
CC5
V
CC
program current
V
CC
erase current
V
CC
suspend current
mA
mA
μ
A
35
35
200
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = RP# =WP# = V
IH
Output high voltage
V
V
V
OL
V
OH1
V
OH2
V
LKO
Output low voltage
V
V
V
V
I
OL
= 4.0mA
I
OH
= –2.0mA
I
OH
= –100
μ
A
0.45
Vcc+0.5
V
IH
Input high voltage
2.0
0.8
V
IL
Input low voltage
– 0.5
0.85Vcc
Vcc–0.4
1.5
Low V
CC
Lock-Out voltage 2)
2.2
I
SB2
5
V
CC
= 3.6V, V
IN
=GND or V
CC
,
CE# = RP# = WP# = V
CC
±
0.3V
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, RP# = V
IL
V
CC
= 3.6V, V
IN
=GND or V
CC
, RP# =GND
±
0.3V
μ
A
0.1
15
4
mA
I
CC1
V
CC
read current for Word or Byte
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, CE# = V
IL
,
RP#=OE#=V
IH
, I
OUT
= 0mA
V
CC
= 3.6V,V
IN
=V
IL
/V
IH
, CE# =WE#= V
IL
,
RP#=OE#=V
IH
8
2
50
I
CC2
15
mA
V
CC
Write current for Word or Byte
μ
A
μ
A
15
5
5
I
SB3
I
SB4
0.1
5MHz
1MHz
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