參數(shù)資料
型號(hào)： M5M29GB
廠商： Mitsubishi Electric Corporation
英文描述： 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁(yè)數(shù)： 9/23頁(yè)
文件大?。?/td> 200K
代理商： M5M29GB
MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
9
BLOCK LOCKING
1) DQ
6
provides Lock Status of each block after writing the Read Lock Status command (71H).
WP1# & WP2# pins must not be switched during performing Erase / Write operations or WSM Busy (WSMS = 0).
2) Erase/Write command for locked blocks is aborted. At this time read mode is not array read mode but status read mode and
00B0H is read. Please issue Clear Status Register command plus Read Array command to change the mode from status read mode
to array read mode.
STATUS REGISTER
Status
Erase Status
Program Status
Block Status after Program
Reserved
Definition
Symbol
(DQ
5
)
(DQ
4
)
(DQ
3
)
(DQ
2
)
Write State Machine Status
Suspend Status
(DQ
7
)
(DQ
6
)
(DQ
1
)
(DQ
0
)
"1"
"0"
Busy
Ready
Suspended
Error
Error
Error
-
Operation in Progress / Completed
Successful
Successful
Successful
-
SR.5
SR.4
SR.3
SR.2
SR.7
SR.6
SR.1
SR.0
Reserved
-
-
*DQ3 indicates the block status after the page programming, byte/word programming and page buffer to flash. When DQ3 is "1", the page has the
over-programed cell . If over-program occurs, the device is block fail. However if DQ3 is "1", please try the block erase to the block. The block may revive.
Reserved
-
-
Deep Power Down Mode
Write Protection Provided
BANK(I)
Parameter
Locked
Locked
Locked
Unlocked
Locked
Locked
Locked
Unlocked
Locked
V
IL
RP#
WP1#
WP2#
X
X
Lock
Bit
(Internally)
X
0
1
X
X
0
1
Lock Bit
Boot
Data
Locked
Locked
Locked
Locked
Locked
Note
All Blocks Locked
All Blocks Unlocked
V
IH
V
IL
V
IH
V
IH
V
IL
V
IL
V
IL
V
IH
V
IH
Locked
Locked
Locked
Locked
Locked
Locked
Locked
Locked
Unlocked Unlocked Unlocked
Locked
Unlocked Unlocked
Only Parameter Block is Unlocked
BANK(II)
161BWG
相關(guān)PDF資料
PDF描述
M5M417400CJ-5 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CJ-5S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CJ FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CTP-5 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
M5M417400CTP-5S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29GB160BVP 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BVP-80 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB160BWG 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BVP 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BWG 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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