- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370969 > M5M29GB (Mitsubishi Electric Corporation) 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | M5M29GB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 11/23頁 |
| 文件大?。?/td> | 200K |
| 代理商： | M5M29GB |
MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
11
Read-Only Mode
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~85
°
C, Vcc = 2.7V ~3.6V)
Write Mode
(WE# control)
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~85
°
C, Vcc = 2.7V ~3.6V)
Timing measurements are made under AC waveforms for read operations.
Symbol
Parameter
Limits
t
a (AD)
t
a (CE)
t
a (OE)
Address access time
Chip enable access time
Output enable access time
t
AVQV
t
ELQV
t
GLQV
t
CLZ
t
DF(CE)
t
OLZ
t
DF(OE)
t
PHZ
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
RP# low to output high-Z
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
PLQZ
t
RC
Read cycle time
t
AVAV
t
OH
t
PS
Output hold from CE#, OE#, addresses
RP# recovery to CE# low
t
OH
t
PHEL
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Vcc=2.7-3.6V
90ns
90
90
30
0
25
90
0
0
25
150
150
Max
Min
Typ
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at Vcc=3.3V, Ta=25
°
C
Symbol
Parameter
Write cycle time
Address set-up time
Data hold time
OE# hold from WE# high
Latency between Read and Write FFH or 71H
Data set-up time
Address hold time
t
AVAV
t
AVWH
t
WHDX
t
WHGL
-
t
DVWH
t
WHAX
t
WC
t
AS
t
DH
t
OEH
t
RE
t
DS
t
AH
Limits
90ns
Typ
90
50
0
50
0
10
30
Max
Min
Unit
ns
ns
ns
ns
ns
ns
ns
Write pulse width
Write pulse width high
OE# hold to WE# Low
Chip enable hold time
Chip enable set-up time
RP# high recovery to write enable low
Block Lockhold from valid SRD
Duration of auto-program operation
Duration of auto-block erase operation
Write enable high to F-RY/BY# low
Block Lock set-up to write enable high
t
WLWH
t
WHWL
t
GHWL
t
WHEH
t
ELWL
t
PHWL
t
QVPH
t
WHRH1
t
WHRH2
t
WHRL
t
PHHWH
t
WHRL
t
PS
t
WP
t
WPH
t
GHWL
t
CH
t
CS
t
BLS
t
BLH
t
DAP
t
DAE
150
4
40
90
80
600
60
30
0
0
0
90
0
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
Vcc=2.7-3.6V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M417400CJ-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29GB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。