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參數(shù)資料
| 型號(hào)： | M5M29GB |
| 廠(chǎng)商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁(yè)數(shù)： | 22/23頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | M5M29GB |
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MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
22
SUSPEND / RESUME FLOW CHART
START
WRITE B0H
OPERATION
RESUMED
SR.6 =1
YES
NO
WRITE FFH
READ ARRAY DATA
DONE
READING
NO
YES
WRITE D0H
SUSPEND
RESUME
BLOCK ERASE FLOW CHART
START
WRITE 20H
WRITE D0H
BLOCK ADDRESS
FULL STATUS CHECK
IF DESIRED
YES
SR.7 = 1
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
BLOCK ERASE
COMPLETED
STATUS REGISTER
READ
SR.7 = 1
YES
NO
PROGRAM / ERASE
COMPLETED
* The bank address is required when writing this command. Also, there is
no need to suspend the erase or program operation when reading data
from the other bank. Please use BGO function.
SINGLE DATA LOAD TO PAGE BUFFER
START
WRITE 74H
FULL STATUS CHECK
IF DESIRED
PAGE BUFFER TO FLASH
COMPLETED
WRITE
ADDRESS , DATA
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
WRITE 0EH
WRITE D0H
PAGE ADDRESS
SR.7 = 1
YES
DONE
LOADING
NO
SINGLE DATA LOAD
TO PAGE BUFFER
COMPLETED
PAGE BUFFER TO FLASH
START
CLEAR PAGE BUFFER
START
WRITE 55H
WRITE D0H
PAGE BUFFER CLEAR
COMPLETED
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M417400CJ-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29GB160BVP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP-80 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BWG | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BVP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BWG | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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