參數(shù)資料
型號: MB81V17805B-60
廠商: Fujitsu Limited
英文描述: 2M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2M ×8位超級頁面存取模式動態(tài)RAM)
中文描述: 200萬× 8位超頁模式動態(tài)RAM的CMOS(200萬× 8位超級頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 7/29頁
文件大?。?/td> 557K
代理商: MB81V17805B-60
7
MB81V17805B-50/-60
I
DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) Note 3
Parameter
Notes
Symbol
Condition
Value
Unit
Min. Typ. Max.
2.4
Output High Voltage
Output Low Voltage
*1
*1
V
OH
V
OL
I
OH
= –2.0 mA
I
OL
= +2.0 mA
0 V
V
IN
V
CC
;
3.0 V
V
CC
3.6 V;
V
SS
= 0 V; All other pins
not under test = 0 V
0 V
V
OUT
V
CC
;
Data out disabled
3.0 V
V
CC
3.6 V
0.4
V
Input Leakage Current (Any Input)
I
I(L)
–10
10
μ
A
Output Leakage Current
I
DQ(L)
–10
10
Operating Current
(Average Power
Supply Current)
Standby Current
(Power Supply
Current)
Refresh Current #1
(Average Power
Supply Current)
*2
MB81V17805B-50
I
CC1
RAS & CAS cycling;
t
RC
= min
130
mA
MB81V17805B-60
110
*2
LVTTL Level
I
CC2
RAS = CAS = V
IH
1.0
mA
CMOS Level
RAS = CAS
V
CC
–0.2 V
0.5
*2
MB81V17805B-50
I
CC3
CAS = V
IH
, RAS cycling;
t
RC
= min
130
mA
MB81V17805B-60
110
Hyper Page Mode
Current
*2
MB81V17805B-50
I
CC4
RAS = V
IL,
CAS cycling;
t
HPC
= min
100
mA
MB81V17805B-60
90
Refresh Current #2
(Average Power
Supply Current)
*2
MB81V17805B-50
I
CC5
RAS cycling;
CAS-before-RAS;
t
RC
= min
130
mA
MB81V17805B-60
110
相關(guān)PDF資料
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MB81V18160A-70 CMOS 1M ×16 BIT Fast Page Mode Dynamic RAM(CMOS 1M ×16 位快速頁面存取模式動態(tài)RAM)
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