參數(shù)資料
型號: MB81V17805B-60
廠商: Fujitsu Limited
英文描述: 2M ×8 BIT Hyper Page Mode Dynamic RAM(CMOS 2M ×8位超級頁面存取模式動態(tài)RAM)
中文描述: 200萬× 8位超頁模式動態(tài)RAM的CMOS(200萬× 8位超級頁面存取模式動態(tài)內存)
文件頁數(shù): 8/29頁
文件大小: 557K
代理商: MB81V17805B-60
8
MB81V17805B-50/-60
I
AC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) Notes 3, 4, 5
(Continued)
No.
Parameter
Notes
Symbol
MB81V17805B-50
MB81V17805B-60
Unit
Min.
Max.
Min.
Max.
1
Time Between Refresh
t
REF
32.8
32.8
ms
2
Random Read/Write Cycle Time
t
RC
84
104
ns
3
Read-Modify-Write Cycle Time
t
RWC
114
138
ns
4
Access Time from RAS
*6,9
t
RAC
50
60
ns
5
Access Time from CAS
*7,9
t
CAC
13
15
ns
6
Column Address Access Time
*8,9
t
AA
25
30
ns
7
Output Hold Time
t
OH
3
3
ns
8
Output Hold Time from CAS
t
OHC
3
3
ns
9
Output Buffer Turn On Delay Time
t
ON
0
0
ns
10
Output Buffer Turn Off Delay Time
*10
t
OFF
13
15
ns
11
Output Buffer Turn Off Delay Time
from RAS
*10
t
OFR
13
15
ns
12
Output Buffer Turn Off Delay Time
from WE
*10
t
WEZ
13
15
ns
13
Transition Time
t
T
1
50
1
50
ns
14
RAS Precharge Time
t
RP
30
40
ns
15
RAS Pulse Width
t
RAS
50
100000
60
100000
ns
16
RAS Hold Time
t
RSH
13
15
ns
17
CAS to RAS Precharge Time
*21
t
CRP
5
5
ns
18
RAS to CAS Delay Time
t
RCD
11
37
14
45
ns
19
CAS Pulse Width
t
CAS
7
10
ns
20
CAS Hold Time
t
CSH
38
40
ns
21
CAS Precharge Time (Normal)
*19
t
CPN
7
10
ns
22
Row Address Set Up Time
t
ASR
0
0
ns
23
Row Address Hold Time
t
RAH
7
10
ns
24
Column Address Set Up Time
t
ASC
0
0
ns
25
Column Address Hold Time
t
CAH
7
10
ns
26
Column Address Hold Time from RAS
t
AR
18
24
ns
27
RAS to Column Address Delay Time
*13
t
RAD
9
25
12
30
ns
28
Column Address to RAS Lead Time
t
RAL
25
30
ns
29
Column Address to CAS Lead Time
t
CAL
18
23
ns
30
Read Command Set Up Time
t
RCS
0
0
ns
31
Read Command Hold Time
Referenced to RAS
*14
t
RRH
0
0
ns
*11,12,22
相關PDF資料
PDF描述
MB81V18160A-70 CMOS 1M ×16 BIT Fast Page Mode Dynamic RAM(CMOS 1M ×16 位快速頁面存取模式動態(tài)RAM)
MB81V18160A-70L CMOS 1M ×16 BIT Fast Page Mode Dynamic RAM(CMOS 1M ×16 位快速頁面存取模式動態(tài)RAM)
MB81V18165A-70 CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16位超級頁面存取模式動態(tài)RAM)
MB81V18165A-70L CMOS 1M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×16位超級頁面存取模式動態(tài)RAM)
MB81V18165B-50 1 M ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超級頁面存取模式動態(tài)RAM)
相關代理商/技術參數(shù)
參數(shù)描述
MB82 功能描述:RECTIFIER BRIDGE 8A 200V BR-6 RoHS:否 類別:分離式半導體產(chǎn)品 >> 橋式整流器 系列:- 產(chǎn)品變化通告:Product Discontinuation 14/Mar/2011 標準包裝:1,500 系列:- 電壓 - 峰值反向(最大):1000V 電流 - DC 正向(If):1.5A 二極管類型:單相 速度:標準恢復 >500ns,> 200mA(Io) 反向恢復時間(trr):- 安裝類型:表面貼裝 封裝/外殼:4-SMD 包裝:帶卷 (TR) 供應商設備封裝:4-SDIP
MB820 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標準包裝:1 系列:*
MB-8210 制造商:Maxxtro 功能描述:Bulk
MB82101BAN 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS
MB82101BBN 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS