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參數(shù)資料
| 型號： | MBM29F033C-90PTR |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 32M (4M X 8) BIT |
| 中文描述： | 4M X 8 FLASH 5V PROM, 90 ns, PDSO40 |
| 封裝： | PLASTIC, REVERSE, TSOP1-40 |
| 文件頁數(shù)： | 14/46頁 |
| 文件大小： | 478K |
| 代理商： | MBM29F033C-90PTR |
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14
MBM29F033C
-70/-90/-12
To verify programming of the protection circuitry, the programming equipment must force V
ID
on address pin A
9
with CE and OE at V
IL
and WE at V
IH
. Scanning the sector addresses (A
21
, A
20
, A
19
, and A
18
) while (A
6
, A
1
, A
0
) =
(0, 1, 0) will produce a logical “1” code at device output DQ
0
for a protected sector. Otherwise the device will
produce 00H for unprotected sector. In this mode, the lower order addresses, except for A
0
, A
1
, and A
6
are don’t
care. Address locations with A
1
= V
IL
are reserved for Autoselect manufacturer and device codes.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02H, where the higher order addresses (A
21
, A
20
, A
19
,
and A
18
) are the desired sector group address will produce a logical “1” at DQ
0
for a protected sector group. See
Table 3 for Autoselect codes.
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PDF描述 |
|---|---|
| MBM29F033C-12 | 32M (4M X 8) BIT |
| MBM29F033C-12PTN | 32M (4M X 8) BIT |
| MBM29F040A-12 | Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85 |
| MBM29F040A-12-X | FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040A-90-X | FLASH MEMORY CMOS 4M 512K X 8 BIT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F040A-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040A-12-X | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040A-90-X | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT |
| MBM29F040C | 制造商:FUJRTSU 功能描述: |
| MBM29F040C-55 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT |
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