參數(shù)資料
型號: MBM29F400TC-70PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: Replaced by TPS2044B : 0.7A, 2.7-5.5V Quad (2In/4Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC 0 to 85
中文描述: 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 28/47頁
文件大?。?/td> 542K
代理商: MBM29F400TC-70PFTN
28
MBM29F400TC
-55/-70/-90
/MBM29F400BC
-55/-70/-90
I
SWITCHING WAVEFORMS
Key to Switching Waveforms
WE
OE
CE
t
ACC
t
DF
t
OH
t
CE
t
OE
Outputs
t
RC
Addresses
Addresses Stable
High-Z
Output Valid
High-Z
t
OEH
Figure 5 AC Waveforms for Read Operations
WAVEFORM
INPUTS
OUTPUTS
Must Be
Steady
May
Change
from H to L
May
Change
from L to H
“H” or “L”
Any Change
Permitted
Does Not
Apply
Will Be
Steady
Will Be
Changing
from H to L
Will Be
Changing
from L to H
Changing
State
Unknown
Center Line is
High-
Impedance
“Off” State
相關(guān)PDF資料
PDF描述
MBM29F400TC-70PFTR Replaced by TPS2044B : 0.7A, 2.7-5.5V Quad (2In/4Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC 0 to 85
MBM29F400TC-90 Quad Current-Limited Power Distribution Switches 16-SOIC -40 to 85
MBM29F400TC-90PF Quad Current-Limited Power Distribution Switches 16-SOIC -40 to 85
MBM29F800B-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800T-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F400TC-70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29F400TC-90 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT
MBM29F400TC-90PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29F400TC-90PF# 制造商:FUJITSU 功能描述:
MBM29F400TC-90PF-SFL(E1) 制造商:Spansion 功能描述: