參數(shù)資料
型號: MBM29F400TC-70PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: Replaced by TPS2044B : 0.7A, 2.7-5.5V Quad (2In/4Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC 0 to 85
中文描述: 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 5/47頁
文件大?。?/td> 542K
代理商: MBM29F400TC-70PFTN
5
MBM29F400TC
-55/-70/-90
/MBM29F400BC
-55/-70/-90
I
PRODUCT LINE UP
I
BLOCK DIAGRAM
Part No.
MBM29F400TC/MBM29F400BC
Ordering Part No.
V
CC
= 5.0 V ± 5 %
-55
V
CC
= 5.0 V ± 10 %
-70
-90
Max. Address Access Time (ns)
55
70
90
Max. CE Access Time (ns)
55
70
90
Max. OE Access Time (ns)
30
30
35
V
SS
V
CC
WE
CE
OE
A
0
to A
17
Erase Voltage
Generator
DQ
0
to DQ
15
State
Control
Command
Register
Program Voltage
Generator
Low V
CC
Detector
Address
Latch
X-Decoder
Y-Decoder
Cell Matrix
Y-Gating
Chip Enable
Output Enable
Logic
Data Latch
Input/Output
Buffers
STB
STB
Timer for
Program/Erase
A
-1
BYTE
RESET
RY/BY
Buffer
RY/BY
相關PDF資料
PDF描述
MBM29F400TC-70PFTR Replaced by TPS2044B : 0.7A, 2.7-5.5V Quad (2In/4Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC 0 to 85
MBM29F400TC-90 Quad Current-Limited Power Distribution Switches 16-SOIC -40 to 85
MBM29F400TC-90PF Quad Current-Limited Power Distribution Switches 16-SOIC -40 to 85
MBM29F800B-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800T-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
相關代理商/技術參數(shù)
參數(shù)描述
MBM29F400TC-70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29F400TC-90 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT
MBM29F400TC-90PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29F400TC-90PF# 制造商:FUJITSU 功能描述:
MBM29F400TC-90PF-SFL(E1) 制造商:Spansion 功能描述: