參數(shù)資料
型號： MBM29F800B-12
廠商： Fujitsu Limited
英文描述： 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
中文描述： 8米（1米× 8/512K × 6）位Falsh內(nèi)存（單5V的電源電壓100萬× 8/512K × 6位閃速存儲器）
文件頁數(shù)： 1/51頁
文件大?。?/td> 642K
代理商： MBM29F800B-12
DS05-20816-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8M (1M
×
8/512K
×
16) BIT
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
I
FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
Compatible with JEDEC-standard word-wide pinouts
48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
Minimum 100,000 write/erase cycles
High performance
90 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low Vcc write inhibit
≤
3.2 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Hardware RESET pin
Resets internal state machine to the read mode
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Temporary sector unprotection
Hardware method temporarily enables any combination of sectors from write on erase operations.
2
PROMs
TM
TM
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料
PDF描述
MBM29F800T-12 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800T-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F800B-90PFTN# 制造商:FUJITSU 功能描述:
MBM29F800BA 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY
MBM29F800BA-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800BA-55PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800BA-55PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
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