參數(shù)資料
型號(hào): MBM29LV320TE80TN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 32 M (4 M X 8/2 M X 16) BIT
中文描述: 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 41/64頁
文件大小: 877K
代理商: MBM29LV320TE80TN
MBM29LV320TE/BE
80/90/10
41
I
ERASE AND PROGRAMMING PERFORMANCE
I
TSOP (I) PIN CAPACITANCE
Note : Test conditions T
A
=
+
25
°
C, f
=
1.0 MHz
I
FBGA PIN CAPACITANCE
Note : Test conditions T
A
=
+
25
°
C, f
=
1.0 MHz
Parameter
Limits
Unit
Comments
Min
Typ
Max
Sector Erase Time
1
10
s
Excludes programming time
prior to erasure
Word Programming Time
16
360
μ
s
μ
s
Excludes system-level over-
head
Byte Programming Time
8
300
Chip Programming Time
100
s
Excludes system-level over-
head
Program/Erase Cycle
100,000
cycle
Parameter
Symbol
Condition
Value
Unit
Typ
Max
Input Capacitance
C
IN
V
IN
=
0
V
OUT
=
0
V
IN
=
0
V
IN
=
0
6.0
7.5
pF
Output Capacitance
C
OUT
8.5
12.0
pF
Control Pin Capacitance
C
IN2
8.0
10.0
pF
WP/ACC Pin Capacitance
C
IN3
15.0
20.0
pF
Parameter
Symbol
Condition
Value
Unit
Typ
Max
Input Capacitance
C
IN
V
IN
=
0
V
OUT
=
0
V
IN
=
0
V
IN
=
0
6.0
7.5
pF
Output Capacitance
C
OUT
8.5
12.0
pF
Control Pin Capacitance
C
IN2
8.0
10.0
pF
WP/ACC Pin Capacitance
C
IN3
15.0
20.0
pF
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