參數(shù)資料
型號(hào)： MC34982PNA
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： Single Intelligent High-Current Self-Protected Silicon High-Side Switch (2.0 mOhm)(單智能大電流帶自保護(hù)功能的硅高端開關(guān)（2mOhm）)
中文描述： 單智能大電流的自我保護(hù)硅高邊開關(guān)（2.0毫歐）（單智能大電流帶自保護(hù)功能的硅高端開關(guān)（2mOhm））
文件頁數(shù)： 11/24頁
文件大?。?/td> 771K
代理商： MC34982PNA
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
33982
11
POWER OUTPUT TIMING (continued)
Output Turn-ON Delay Time in Fast/Slow Slew Rate (Note 20)
DICR = 0, DICR = 1
t
DLY(ON)
1.0
18
100
μ
s
Output Turn-OFF Delay Time in Slow Slew Rate Mode (Note 21)
DICR = 0
t
DLY_SLOW(OFF)
20
230
500
μ
s
Output Turn-OFF Delay Time in Fast Slew Rate Mode (Note 21)
DICR = 1
t
DLY_FAST(OFF)
10
60
200
μ
s
Direct Input Switching Frequency (DICR D3 = 0)
f
PWM
–
300
–
Hz
Overcurrent Detection Blanking Time (OCLT[1:0])
00
01
10
11
t
OCL0
t
OCL1
t
OCL2
t
OCL3
108
7.0
0.8
0.08
155
10
1.2
0.15
202
13
1.6
0.25
ms
Overcurrent High Detection Blanking Time
t
OCH
1.0
10
20
μ
s
CS
to CSNS Valid Time (Note 22)
CNS
VAL
–
–
10
μ
s
Output Switching Delay Time (OSD[2:0])
000
001
010
011
100
101
110
111
t
OSD0
t
OSD1
t
OSD2
t
OSD3
t
OSD4
t
OSD5
t
OSD6
t
OSD7
–
52
105
157
210
262
315
367
0
75
150
225
300
375
450
525
–
95
195
293
390
488
585
683
ms
Watchdog Timeout (WD[1:0]) (Note 23)
00
01
10
11
t
WDTO0
t
WDTO1
t
WDTO2
t
WDTO3
434
207
1750
875
620
310
2500
1250
806
403
3250
1625
ms
Notes
20.
Turn-ON delay time measured from rising edge of any signal (IN, SCLK,
CS
) that would turn the output ON to V
OUT
= 0.5 V with R
L
= 5.0
resistive load.
Turn-OFF delay time measured from falling edge of any signal (IN, SCLK,
CS
) that would turn the output OFF to V
OUT
= V
PWR
-0.5 V with
R
L
= 5.0
resistive load.
Time necessary for the CSNS to be within ±5% of the targeted value.
Watchdog timeout delay measured from the rising edge of WAKE to
RST
from a sleep state condition to output turn-ON with the output driven
OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of t
WDTO
is consistent for all configured watchdog timeouts.
21.
22.
23.
DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.5 V
≤
V
DD
≤
5.5 V, 6.0 V
≤
V
PWR
≤
27 V, -40
°
C
≤
T
J
≤
150
°
C unless otherwise noted. Typical
values noted reflect the approximate parameter mean at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
F
Freescale Semiconductor, Inc.
Go to: www.freescale.com
n
.
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