參數(shù)資料
型號(hào): MCIMX257DVM4
廠商: Freescale Semiconductor
文件頁數(shù): 80/153頁
文件大小: 0K
描述: IC MPU I.MX25 COMM 400MAPBGA
標(biāo)準(zhǔn)包裝: 90
系列: i.MX25
核心處理器: ARM9
芯體尺寸: 32-位
速度: 400MHz
連通性: 1 線,CAN,EBI/EMI,以太網(wǎng),I²C,MMC,智能卡,SPI,SSI,UART/USART,USB OTG
外圍設(shè)備: DMA,I²S,LCD,POR,PWM,WDT
輸入/輸出數(shù): 128
程序存儲(chǔ)器類型: 外部程序存儲(chǔ)器
RAM 容量: 144K x 8
電壓 - 電源 (Vcc/Vdd): 1.15 V ~ 1.52 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 3x12b
振蕩器型: 外部
工作溫度: -20°C ~ 70°C
封裝/外殼: 400-LFBGA
包裝: 托盤
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 10
32
Freescale Semiconductor
3.6.3
DDR I/O AC Parameters
The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see
Chapter 4, “External Signals and Pin Multiplexing,” in the i.MX25 Multimedia Applications Processor
Reference Manual).
3.6.3.1
DDR_TYPE = 00 Standard Setting I/O AC Parameters and Requirements
Table 24 shows AC parameters for mobile DDR I/O. These settings are suitable for mDDR and DDR2
1.8V (
± 5%) applications.
Input Pad Propagation Delay with Hysteresis,
tpi
1.6pF
1.353/1.457
1.637/1.659
2.163/1.991
ns
Input Pad Transition Times without Hysteresis4
trfi
1.6pF
0.16/0.12
0.23/0.18
0.33/0.29
ns
Input Pad Transition Times with Hysteresis4
trfi
1.6pF
0.16/0.13
0.22/0.18
0.33/0.29
ns
Maximum Input Transition Times5
trm
ns
1 Maximum condition for tpr, tpo, and tpv: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpr, tpo, and tpv: bcs
model, 1.3 V, IO 3.6 V and –40 °C. Input transition time from core is 1ns (20%–80%).
2 Minimum condition for tps: wcs model, 1.1 V, IO 3.0 V and 105 °C. tps is measured between VIL to VIH for rising edge and
between VIH to VIL for falling edge.
3 Maximum condition for tdit: bcs model, 1.3 V, IO 3.6 V and –40 °C.
4 Maximum condition for tpi and trfi: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
IO 3.6 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
5 Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table 24. AC Parameters for Mobile DDR I/O
Parameter
Symbol
Load
Condition
Min.
Rise/Fall
Typ.
Max.
Rise/Fall
Units
Duty cycle
Fduty
40
50
60
%
Clock frequency1
f
133
MHz
Output pad transition times1 (max. drive)
tpr
25 pF
50 pF
0.52/0.51
0.98/0.96
0.79/0.72
1.49/1.34
1.25/1.09
2.31/1.98
ns
Output pad transition times1 (high drive)
tpr
25 pF
50 pF
1.13/1.10
2.15/2.10
1.74/1.55
3.28/2.92
2.71/2.30
5.11/4.31
ns
Output pad transition times1 (standard drive)
tpr
25 pF
50 pF
2.26/2.19
4.30/4.18
3.46/3.07
6.59/5.79
5.39/4.56
10.13/8.55
ns
Output pad propagation delay1 (max. drive),
50%–50%
tpo
15 pF
35 pF
0.80/1.03
1.06/1.32
1.36/1.50
1.76/1.90
2.21/2.40
2.83/2.82
ns
Output pad propagation delay1 (high drive),
50%–50%
tpo
15 pF
35 pF
1.04/1.27
1.63/1.90
1.74/1.83
2.63/2.69
2.79/2.70
4.18/3.86
ns
Output pad propagation delay1 (standard drive),
50%–50%
tpo
15 pF
35 pF
1.55/1.80
2.72/3.06
2.53/2.57
4.31/4.29
4.03/3.76
6.80/6.19
ns
Output pad propagation delay1 (max. drive),
40%–60%
tpo
15 pF
35 pF
0.80/0.91
1.06/1.12
1.44/1.59
1.76/1.91
2.24/2.29
2.74/2.75
ns
Table 23. Fast I/O AC Parameters for OVDD = 3.03.6 V (continued)
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