參數(shù)資料
型號: MCIMX258CJM4
廠商: Freescale Semiconductor
文件頁數(shù): 68/153頁
文件大?。?/td> 0K
描述: MPU IMX25 IND 400-MAPBGA
特色產(chǎn)品: MCIMX25 Applications Processors
標(biāo)準(zhǔn)包裝: 90
系列: i.MX25
核心處理器: ARM9
芯體尺寸: 32-位
速度: 400MHz
連通性: 1 線,CAN,EBI/EMI,以太網(wǎng),I²C,MMC,智能卡,SPI,SSI,UART/USART,USB OTG
外圍設(shè)備: DMA,I²S,LCD,POR,PWM,WDT
輸入/輸出數(shù): 128
程序存儲器類型: 外部程序存儲器
RAM 容量: 144K x 8
電壓 - 電源 (Vcc/Vdd): 1.15 V ~ 1.52 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 3x12b
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 400-LFBGA
包裝: 托盤
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 10
Freescale Semiconductor
21
NOTE
The term ‘OVDD’ in this section refers to the associated supply rail of an
input or output. The association is shown in the “Signal Multiplexing”
chapter of the reference manual.
3.5.1
DDR I/O DC Parameters
The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see the
External Signals and Pin Multiplexing chapter of the i.MX25 Reference Manual for details).
3.5.1.1
DDR_TYPE = 00 Standard Setting DDR I/O DC Parameters
Table 17 shows the I/O parameters for mobile DDR. These settings are suitable for mDDR and DDR2
1.8V (
± 5%) applications.
Table 17. Mobile DDR I/O DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
High-level output voltage
Voh
IOH = –1mA
IOH = Specified Drive
OVDD – 0.08
0.8
× OVDD
——
V
Low-level output voltage
Vol
IOL = 1mA
IOL = Specified Drive
——
0.08
0.2
× OVDD
V
High-level output current
I
Ioh
Voh = 0.8
× OVDDV
Standard Drive
High Drive
Max. Drive
–3.6
–7.2
–10.8
——
mA
Low-level output current
I
Iol
Vol = 0.2
× OVDDV
Standard Drive
High Drive
Max. Drive
3.6
7.2
10.8
——
mA
High-level DC CMOS input voltage
VIH
0.7
× OVDD
OVDD
OVDD+0.3
V
Low-level DC CMOS input voltage
VIL
–0.3
0
0.3
× OVDD
V
Differential receiver VTH+
VTH+
100
mV
Differential receiver VTH-
VTH-
–100
mV
Input current (no pull-up/down)
IIN
VI = 0
VI = OVDD
——
110
60
nA
High-impedance I/O supply current
Icc-ovdd
VI = OVDD or 0
990
nA
High-impedance core supply current
Icc-vddi
VI = VDD or 0
1220
nA
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