參數(shù)資料
型號: MCV14AI/SL
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PDSO14
封裝: 3.90 MM, PLASTIC, SOIC-4
文件頁數(shù): 62/84頁
文件大?。?/td> 1007K
代理商: MCV14AI/SL
2009 Microchip Technology Inc.
Preliminary
DS41338B-page 63
MCV14A
11.1
DC Characteristics: MCV14A (Industrial)
DC Characteristics
Standard Operating Conditions (unless otherwise specified)
Operating Temperature 40
°C ≤ TA ≤ +85°C (industrial)
Param
No.
Sym
Characteristic
Min
Typ(1)
Max
Units
Conditions
D001
VDD
Supply Voltage
2.0
5.5
V
D002
VDR
RAM Data Retention Voltage(2)
1.5*
V
Device in Sleep mode
D003
VPOR
VDD Start Voltage to ensure
Power-on Reset
—Vss
V
Reset (POR)” for details
D004
SVDD
VDD Rise Rate to ensure
Power-on Reset
0.05*
V/ms
Reset (POR)” for details
D010
IDD
Supply Current(3,4)
175
400
250
700
μA
mA
FOSC = 4 MHz, VDD = 2.0V
FOSC = 4 MHz, VDD = 5.0V
250
0.75
450
1.2
μA
mA
FOSC = 8 MHz, VDD = 2.0V
FOSC = 8 MHz, VDD = 5.0V
—1.8
2.5
mA
FOSC = 20 MHz, VDD = 5.0V
11
38
22
55
μA
FOSC = 32 kHz, VDD = 2.0V
FOSC = 32 kHz, VDD = 5.0V
D020
IPD
Power-down Current(5)
0.1
0.35
1.2
2.2
μA
VDD = 2.0V
VDD = 5.0V
D022
IWDT
WDT Current(5)
1.0
7.0
3.0
16.0
μA
VDD = 2.0V
VDD = 5.0V
D023
ICMP
Comparator Current(5)
15
60
26
76
μA
VDD = 2.0V (per comparator)
VDD = 5.0V (per comparator)
D022
IVREF
VREF Current(5)
30
75
135
μA
VDD = 2.0V (high range)
VDD = 5.0V (high range)
D023
IFVR
Internal 0.6V Fixed Voltage
Reference Current(5)
100
175
120
205
μA
VDD = 2.0V (reference and 1
comparator enabled)
VDD = 5.0V (reference and 1
comparator enabled)
D024
ΔIAD
A/D Conversion Current
120
150
μA2.0V
200
250
μA5.0V
*
These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25
°C. This data is for design
guidance only and is not tested.
2: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
4: The test conditions for all IDD measurements in Active Operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR =
VDD; WDT enabled/disabled as specified.
5: For standby current measurements, the conditions are the same as IDD, except that the device is in Sleep
mode. If a module current is listed, the current is for that specific module enabled and the device in Sleep.
6: Does not include current through REXT. The current through the resistor can be estimated by the formula:
I = VDD/2REXT (mA) with REXT in k
Ω.
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