參數(shù)資料
型號: MPT612FBD48
廠商: NXP SEMICONDUCTORS
元件分類: 模擬信號調(diào)理
英文描述: Maximum power point tracking IC
中文描述: SPECIALTY ANALOG CIRCUIT, PQFP48
封裝: 7 X 7 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT313-2, LQFP-48
文件頁數(shù): 20/37頁
文件大?。?/td> 607K
代理商: MPT612FBD48
NXP Semiconductors
MPT612
Maximum power point tracking IC
MPT612
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 14 September 2010
20 of 20
[11] Performed per AEC-Q100-002
[12] Performed per AEC-Q100-003
[13] Performed per AEC-Q100-011
9. Static characteristics
Table 4.
Symbol
V
DDC
V
DD(IO)
Static characteristics
[1]
Parameter
core supply voltage
Conditions
Min
Typ
1.8
Max
1.95
Unit
V
[2]
1.65
input/output supply
voltage
[3]
2.6
[4]
3.3
3.6
V
V
DD(ADC)
V
DD(RTC)
ADC supply voltage
pad supply
2.6
[5]
2.0
[6]
3.3
3.6
V
RTC supply voltage
3.3
3.6
V
Standard port pins, RST , RTCK
I
IL
LOW-level input
current
V
I
= 0 V; no pull-up
-
-
3
mA
I
IH
HIGH-level input
current
V
I
= V
DD(IO)
; no pull-down
-
-
3
mA
I
OZ
OFF-state output
current
V
O
= 0 V, V
O
= V
DD(IO)
; no pull-up
or pull-down
(0.5V
DD(IO)
) < V
I
< (1.5V
DD(IO)
);
T
j
< 125
°
C
pin configured to provide a digital
function; V
DD(IO)
and
V
DD(ADC)
3 V
pin configured to provide a digital
function; V
DD(IO)
and
V
DD(ADC)
< 3 V
output active
-
-
3
mA
I
latch
I/O latch-up current
-
-
100
mA
V
I
input voltage
[7][8][9]
0
-
5.5
V
[7][8][9]
0
-
V
DD(IO)
V
V
O
V
IH
output voltage
0
-
V
DD(IO)
-
V
HIGH-level input
voltage
2
-
V
V
IL
LOW-level input
voltage
-
-
0.8
V
V
hys
V
OH
hysteresis voltage
I
OH
=
4 mA
0.4
V
DD(IO)
0.4 -
-
-
V
HIGH-level output
voltage
-
V
V
OL
LOW-level output
voltage
I
OL
=
4 mA
[10]
-
-
0.4
V
I
OH
HIGH-level output
current
V
OH
= V
DD(IO)
0.4 V
[10]
4
-
-
mA
I
OL
LOW-level output
current
V
OL
= 0.4 V
[10]
4
-
-
mA
I
OHS
HIGH-level short-
circuit output current
V
OH
= 0 V
[11]
-
-
45
mA
I
OLS
LOW-level short-circuit
output current
V
OL
= V
DD(ADC)
[11]
-
-
50
mA
I
pd
pull-down current
V
I
= 5 V
[12]
10
50
150
mA
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