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參數(shù)資料
| 型號： | MRF6V2010NBR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | RF功率場效應晶體管N溝道增強型MOSFET的外側 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 595K |
| 代理商： | MRF6V2010NBR1 |
MRF6V2010NR1 MRF6V2010NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for CW large-signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 30 mA,
P
out
= 10 Watts
Power Gain — 23.9
dB
Drain Efficiency — 62%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
Integrated ESD Protection
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
200
°
C Capable Plastic Package
RoHS Compliant
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +110
Vdc
Gate-Source Voltage
V
GS
-0.5, +10
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81
°
C, 10 W CW
R
θ
JC
3.0
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6V2010N
Rev. 1, 5/2007
Freescale Semiconductor
Technical Data
10-450 MHz, 10 W, 50 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6V2010NR1
MRF6V2010NBR1
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6V2010NR1
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF6V2010NBR1
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V2010NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2010 Series 450 MHz 10 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2010NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2150N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
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