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參數(shù)資料
| 型號： | MRF6V2010NBR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | RF功率場效應晶體管N溝道增強型MOSFET的外側 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 595K |
| 代理商： | MRF6V2010NBR1 |
14
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2007
Initial Release of Data Sheet
1
May 2007
Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1,
C8, C11, C18, C4, C13, C5, and C14, p. 3
Corrected Series Impedance Z
source
and Z
load
values, Fig. 13, Series Equivalent Source and Load
Impedance, p. 7
相關PDF資料 |
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| MRF6V2010N | RF Power Field Effect Transistor |
| MRF6V2150NBR1 | RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2150N | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NBR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300N | N-Channel Enhancement-Mode Lateral MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V2010NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2010 Series 450 MHz 10 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2010NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V2010NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2150N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
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