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參數(shù)資料
| 型號： | MS81V06160 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 元件分類： | DRAM |
| 英文描述： | (401,408-word ⅴ 16-bit) FIFO memory |
| 中文描述： | （401408字ⅴ16位），F(xiàn)IFO存儲器 |
| 文件頁數(shù)： | 10/18頁 |
| 文件大?。?/td> | 266K |
| 代理商： | MS81V06160 |
Semiconductor
MS81V06160
10/18
OPERATION MODE
Write Operation Cycle
The write operation is controlled by four control signals, SWCK, RSTW, WE, and IE. The write operation is
accomplished by cycling SWCK, and holding WE high after the write address pointer reset operation or RSTW.
RSTW must be performed for internal circuit initialization before write operation. WE must be low before and
after the reset cycle (t
LWE
+ t
FWD
).
Each write operation, which begins after RSTW must contain at least 231 active write cycles, i.e., SWCK cycles
while WE and IE are high.
Settings of WE and IE to the operation mode of Write address pointer and Data input.
WE
IE
Internal Write address pointer
Data input (Latency 2)
H
H
Input
H
L
Incremented
L
X
Halted
Not input
X indicates "don't care"
Read Operation Cycle
The read operation is controlled by four control signals, SRCK, RSTR, RE, and OE. The read operation is
accomplished by cycling SRCK, and holding both RE and OE high after the read address pointer reset operation or
RSTR.
Each read operation, which begins after RSTR, must contain at least 231 active read cycles, i.e., SRCK cycles
while RE and OE are high. RE must be low before and after the reset cycle (t
LRE
+ t
FWD
).
Settings of RE and OE to the operation mode of read address pointer and Data output.
RE
OE
Internal Read address pointer
Data output (Latency 2)
H
H
Output
H
L
Incremented
High impedance
L
H
Output
L
L
Halted
High impedance
Power-up and Initialization
On power-up, the device is designed to begin proper operation after at least 200
μ
s after Vcc has stabilized to a
value within the range of recommended operating conditions. After this 200
μ
s stabilization interval, the following
initialization sequence must be performed. Because the read and write address pointers are undefined after
power-up, a minimum of 330 dummy write operations (SWCK cycles) and read operations (SRCK cycles) must be
performed, followed by an RSTW operation and an RSTR operation, to properly initialize the write and the read
address pointer.
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