參數(shù)資料
型號： MS81V06160
廠商： OKI SEMICONDUCTOR CO., LTD.
元件分類： DRAM
英文描述： (401,408-word ⅴ 16-bit) FIFO memory
中文描述： （401408字ⅴ16位），F(xiàn)IFO存儲(chǔ)器
文件頁數(shù)： 7/18頁
文件大?。?/td> 266K
代理商： MS81V06160
Semiconductor
MS81V06160
7/18
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
V
CC
V
T
I
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C, V
SS
Ta = 25°C
Ta = 25°C
—
—
Rating
0.5 to +4.6
0.5 to +4.6
50
1
0 to 70
55 to +150
Unit
V
V
mA
W
°C
°C
Power Supply Voltage
Input Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Recommended Operating Conditions
Parameter
Symbol
V
CC
V
IH
V
IL
Min.
3.0
2.0
0.3
Typ.
3.3
V
CC
0
Max.
3.6
V
CC
+ 0.2
0.8
Unit
V
V
V
Power Supply voltage
Input High Voltage
Input Low Voltage
DC Characteristics
Parameter
Symbol
Condition
0 < V
I
< V
CC
,
Min.
Max.
Unit
Input Leakage Current
I
LI
Other Pins Tested at V = 0 V
0 < V
O
< V
CC
I
OH
= –2 mA
I
OH
= 2 mA
Minimum Cycle Time
Output Open
–10
+10
μΑ
Output Leakage Current
Output “H” Level Voltage
Output “L” Level Voltage
I
LO
V
OH
V
OL
–10
2.4
—
—
—
—
—
+10
—
0.4
210
170
6
6
μΑ
V
V
–12
–15
–12
–15
Operating Current
I
CC1
mA
Standby Current
I
CC2
Input Pin = V
IH
/V
IL
mA
Capacitance
(V
CC
= 3.3 V ± 0.3 V, Ta = 25°C, f = 1 MHz)
Symbol
Max.
C
I
5
C
O
7
Parameter
Unit
pF
pF
Input Capacitance
Output Capacitance
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