參數(shù)資料
型號: MS81V06160
廠商: OKI SEMICONDUCTOR CO., LTD.
元件分類: DRAM
英文描述: (401,408-word ⅴ 16-bit) FIFO memory
中文描述: (401408字ⅴ16位),F(xiàn)IFO存儲器
文件頁數(shù): 9/18頁
文件大?。?/td> 266K
代理商: MS81V06160
Semiconductor
MS81V06160
9/18
Parameter
Symbol
t
WL
t
RL
t
WEL
t
IEL
t
REL
t
OEL
MS81V06160-12, MS81V06160-15
4
4
2
2
2
2
Unit
clk
clk
clk
clk
clk
clk
Write Latency
Read Latency
WE Write Control Latency
IE Write Control Latency
RE Read Control Latency
OE Read Control Latency
AC Characteristic Measuring Conditions
Output Compare Level
1.4 V
Output Load
Input Signal Level
Input Signal Rise/Fall Time
Input Signal Measuring Reference Level
1 TTL + 30 pF
3.0 V/0.0 V
1 ns
1.4 V
Note: Input voltage levels for the AC characteristic measurement are V
= 3.0 V and V
= 0 V.
When transition time t
becomes 1 ns or more, the input signal reference levels for the parameter
measurement are V
IH
(min.) and V
IL
(max.).
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