參數(shù)資料
型號(hào)： MSP430BT5190IZQW
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： RISC MICROCONTROLLER, PBGA113
封裝： LEAD FREE, PLASTIC, BGA-113
文件頁(yè)數(shù)： 61/97頁(yè)
文件大?。?/td> 724K
代理商： MSP430BT5190IZQW
PRODUCTPREVIEW
MSP430BT5190
SLAS703 – APRIL 2010
www.ti.com
REF, Built-In Reference (continued)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
REFVSEL = (0, 1, 2}
Load-current regulation,
IVREF+ = +10 A/–1000 A
IL(VREF+)
2500 V/mA
VREF+ terminal
(4)
AVCC = AVCC (min) for each reference level.
REFVSEL = (0, 1, 2}, REFON = REFOUT = 1
Capacitance at VREF+/-
CVREF+/-
REFON = REFOUT = 1(5)
20
100
pF
terminals
IVREF+ = 0 A
Temperature coefficient of
ppm/°
TCREF+
REFVSEL = (0, 1, 2}, REFON = 1,
30
50
built-in reference(6)
C
REFOUT = 0 or 1
AVCC = AVCC (min) - AVCC(max)
Power supply rejection ratio
TA = 25°C
PSRR_DC
120
300
V/V
(DC)
REFVSEL = (0, 1, 2}, REFON = 1,
REFOUT = 0 or 1
AVCC = AVCC (min) - AVCC(max)
TA = 25°C
Power supply rejection ratio
PSRR_AC
f = 1 kHz,
ΔVpp = 100 mV
6.4
mV/V
(AC)
REFVSEL = (0, 1, 2}, REFON = 1,
REFOUT = 0 or 1
AVCC = AVCC (min) - AVCC(max)
REFVSEL = (0, 1, 2}, REFOUT = 0,
75
REFON = 0
→ 1
Settling time of reference
tSETTLE
s
AVCC = AVCC (min) - AVCC(max)
voltage(7)
CVREF = CVREF(max)
75
REFVSEL = (0, 1, 2}, REFOUT = 1,
REFON = 0
→ 1
(4)
Contribution only due to the reference and buffer including package. This does not include resistance due to PCB trace, etc.
(5)
Two decoupling capacitors, 10F and 100nF, should be connected to VREF to decouple the dynamic current required for an external
reference source if it is used for the ADC12_A. See also the MSP430x5xx Family User's Guide (SLAU208).
(6)
Calculated using the box method: (MAX(-40 to 85°C) – MIN(-40 to 85°C)) / MIN(-40 to 85°C)/(85°C – (–40°C)).
(7)
The condition is that the error in a conversion started after tREFON is less than ±0.5 LSB. The settling time depends on the external
capacitive load when REFOUT = 1.
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER
MIN
TYP
MAX
UNIT
CONDITIONS
DVCC(PGM/ERASE) Program and erase supply voltage
1.8
3.6
V
IPGM
Average supply current from DVCC during program
3
5
mA
IERASE
Average supply current from DVCC during erase
2
mA
IMERASE, IBANK
Average supply current from DVCC during mass erase or bank erase
2
mA
tCPT
Cumulative program time
See (1)
16
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
See (2)
64
85
s
tBlock, 0
Block program time for first byte or word
See (2)
49
65
s
Block program time for each additional byte or word, except for last
tBlock, 1–(N–1)
See (2)
37
49
s
byte or word
tBlock, N
Block program time for last byte or word
See (2)
55
73
s
Erase time for segment, mass erase, and bank erase when
tErase
See (2)
23
32
ms
available.
MCLK frequency in marginal read mode
fMCLK,MGR
0
1
MHz
(FCTL4.MGR0 = 1 or FCTL4. MGR1 = 1)
(1)
The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the flash controller's state machine.
64
Copyright 2010, Texas Instruments Incorporated
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