參數(shù)資料
型號(hào): MSP430BT5190IZQW
廠商: TEXAS INSTRUMENTS INC
元件分類(lèi): 微控制器/微處理器
英文描述: RISC MICROCONTROLLER, PBGA113
封裝: LEAD FREE, PLASTIC, BGA-113
文件頁(yè)數(shù): 8/97頁(yè)
文件大?。?/td> 724K
代理商: MSP430BT5190IZQW
PRODUCTPREVIEW
MSP430BT5190
SLAS703 – APRIL 2010
www.ti.com
Flash Memory
The flash memory can be programmed via the JTAG port, Spy-Bi-Wire (SBW), the BSL, or in-system by the
CPU. The CPU can perform single-byte, single-word, and long-word writes to the flash memory. Features of the
flash memory include:
Flash memory has n segments of main memory and four segments of information memory (A to D) of
128 bytes each. Each segment in main memory is 512 bytes in size.
Segments 0 to n may be erased in one step, or each segment may be individually erased.
Segments A to D can be erased individually. Segments A to D are also called information memory.
Segment A can be locked separately.
RAM Memory
The RAM memory is made up of n sectors. Each sector can be completely powered down to save leakage,
however all data is lost. Features of the RAM memory include:
RAM memory has n sectors. The size of a sector can be found in Memory Organization.
Each sector 0 to n can be complete disabled; however, data retention is lost.
Each sector 0 to n automatically enters low-power retention mode when possible.
For devices that contain USB memory, the USB memory can be used as normal RAM if USB is not required.
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Copyright 2010, Texas Instruments Incorporated
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