參數資料
型號: MSP430C336IPJM
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, MROM, 3.8 MHz, RISC MICROCONTROLLER, PQFP100
封裝: PLASTIC, MS-022, QFP-100
文件頁數: 17/42頁
文件大?。?/td> 637K
代理商: MSP430C336IPJM
MSP430C33x, MSP430P337A
MIXED SIGNAL MICROCONTROLLERS
SLAS227A – OCTOBER 1999 – REVISED JUNE 2000
24
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended and operating free-air temperature range (unless
otherwise noted) (continued)
RAM
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
V(RAMh)
CPU halted (see Note 17)
1.8
V
NOTE 17: This parameter defines the minimum supply voltage when the data in the program memory RAM remains unchanged. No program
execution should happen during this supply voltage condition.
Timer/Port comparator
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
I()
Comparator (Timer/Port)
CPON = 1
VCC = 3 V
175
350
A
I(com)
Comparator (Timer/Port)
CPON = 1
VCC = 5 V
600
A
Vref(COM)
Internal reference voltage at (–) terminal
CPON = 1
VCC = 3 V/5 V
0.230
× VCC1
0.260
× VCC1
V
Vh(COM) Input hysteresis (comparator)
CPON = 1
VCC = 3 V
5
37
mV
Vhys(COM) Input hysteresis (comparator)
CPON = 1
VCC = 5 V
10
42
mV
JTAG, program memory
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
f(TCK)
JTAG/test
TCK frequency
VCC = 3 V
DC
5
MHz
f(TCK)
JTAG/test
TCK frequency
VCC = 5 V
DC
10
MHz
R(test)
Pullup resistors on TMS, TCK, TDI
(see Note 18)
VCC = 3 V/5 V
25
60
90
k
V(FB)
Fuse blow voltage, C versions (see Note 20)
VCC = 3 V/5 V
5.5
6
V(FB)
JTAG/fuse
Fuse blow voltage, E/P versions (see Note 20)
VCC = 3 V/5 V
11
12
I(FB)
(see Note 19)
Supply current on TDI/VPP to blow fuse
100
mA
t(FB)
Time to blow the fuse
1
ms
V(PP)
Programming voltage, applied to TDI/VPP
12.0
12.5
13.0
V
I(PP)
Current from programming voltage source
70
mA
t(pps)
EPROM(E) and
Programming time, single pulse
5
ms
t(ppf)
()
OTP(P) versions only
Programming time, fast algorithm
100
s
Pn
Number of pulses for successful programming
4
100
Pulse
Data retention TJ <55°C
10
Year
t(erase)
EPROM(E) version only
Erase time wave length 2537 at
15 Ws/cm2 (UV lamp of 12 mW/ cm2)
30
min
(erase)
()
y
Write/erase cycles
1000
NOTES: 18. The TMS and TCK pullup resistors are implemented in all ROM(C), OTP(P) and EPROM(E) versions. The pullup resistor on TDI
is implemented in C versions only.
19. Once the fuse is blown no further access to the MSP430 JTAG/test feature is possible.
20. The voltage supply to blow the fuse is applied to TDI/VPP pin during the fuse blowing procedure.
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