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參數(shù)資料
| 型號(hào)： | MT28C256564W18SBT-F605P85BBWT |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| 封裝： | LEAD FREE, FBGA-88 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 218K |
| 代理商： | MT28C256564W18SBT-F605P85BBWT |
256Mb MULTIBANK BURST FLASH
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
PRELIMINARY
09005aef80bcd58d
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C256564W18S.fm - Rev. D Pub 2/04 EN
8
2004 Micron Technology. Inc. All rights reserved.
Part Numbering Information
Micron’s combination memory devices are available
with several different combinations of features (see
Figure 4).
Figure 4: Part Number Chart
NOTE:
1. The first character in this field refers to Flash die #2. The second character in this field refers to Flash die #1.
2. Contact factory for availability.
3. Contact factory for details.
4. Burst mode specifications in the referenced Flash discrete data sheet are not guaranteed.
Valid Part Number Combinations
After building the part number from the part num-
ber chart above, please go to Micron’s Part Marking
Decoder Web site at www.micron.com/decoder to ver-
ify that the part number is offered and valid. If the
device required is not on this list, please contact the
factory.
Device Marking
Due to the size of the package, the Micron standard
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross-referenced to the Micron part
numbers at www.micron.com/decoder. To view the
location of the abbreviated mark on the device, please
refer to customer service note CSN-11, “Product Mark/
Label,” at www.micron.com/csn.
MT28C 2565 64 W18 S FT-F70
P85 BB WT ES
Micron Technology
Flash Family
28C = Dual-Supply Flash/CellularRAM Combo
Density/Organization/Banks
256 = 256Mb (8,192K x 16)
bank x = 5 Multibank 32 Banks
(all banks have the same dimensions)
Flash Access Time
F60 = 60ns2
F70 = 70ns
CellularRAM Density
32 = 32Mb CellularRAM (2 Meg x 16)
64 = 64Mb CellularRAM (4 Meg x 16)
Flash Read Operation
W = Async/Page or Burst
Package Code
FT = 88-ball FBGA (Standard) 8 x 10 grid with eight
support balls
BT = 88-ball FBGA (Lead-free) 8 x 10 grid with eight
support balls3
Operating Temperature Range
WT = Wireless (-25C to +85C)
Flash Burst Frequency
None = Async/Page Operation4
5
= 54 MHz
6
= 66 MHz2
CellularRAM Access Time
P70 = 70ns
P85 = 85ns
Operating Voltage Range
18
VCC
= 1.70V–1.95V
VCCQ = 1.70V–2.24V
CE Select/Special Mark
S = Single CE Flash with Asynchronous CellularRAM
Production Status
Blank = Production
ES = Engineering Samples
QS = Qualification Samples
Flash Boot Block Starting Address1
BB = Bottom boot/Bottom boot
BT = Bottom boot/Top boot
TT = Top boot/Top boot
TB = Top boot/Bottom boot
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