- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224505 > MT28C256564W18SBT-F605P85BBWT SPECIALTY MEMORY CIRCUIT, PBGA88 PDF資料下載
參數(shù)資料
| 型號： | MT28C256564W18SBT-F605P85BBWT |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| 封裝： | LEAD FREE, FBGA-88 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 218K |
| 代理商： | MT28C256564W18SBT-F605P85BBWT |
256Mb MULTIBANK BURST FLASH
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
PRELIMINARY
09005aef80bcd58d
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C256564W18S.fm - Rev. D Pub 2/04 EN
13
2004 Micron Technology. Inc. All rights reserved.
NOTE:
1. C_ZZ# ball LOW, CR4 bit in the CellularRAM configuration register set to zero. Measured at 25°C, this standby cur-
rent is the sum of the Flash standby current and the CellularRAM deep-power down mode current.
2. ICCES and ICCWS values are valid when the device is deselected. Any READ operation performed while in suspend
mode will have an additional current draw of suspend current.
3. Automatic power save (APS) mode reduces ICC to approximately ICCS levels.
4. Currents are measured using CellularRAM full array self-refresh. Currents may be further reduced by using the TCR
or PAR features.
Table 7:
DC Characteristics
It is important to note that the specifications contained in this document supersede the specifications listed in the
referenced individual Flash and CellularRAM data sheets. All currents are in RMS unless otherwise noted.
PARAMETER
SYMBOL
TYP
MAX
UNITS
NOTES
VCC Standby Current
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCS
210
220
A
VCC Standby Current with CellularRAM
Device in deep power-down mode
with 32Mb CellularRAM
with 64Mb CellularRAM
ISBZZ
110
A
VCC Program Suspend Current
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCWS
210
220
A
VCC Erase Suspend Current
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCES
210
220
A
VCC Automatic Power Save Current
with 32Mb CellularRAM
with 64Mb CellularRAM
ICCAPS
210
220
A
3, 4
Table 8:
CFI
It is important to note that the specifications contained in this document supersede the specifications listed in the
referenced individual Flash and CellularRAM data sheets.
OFFSET
DATA
DESCRIPTION
78
32Mb: 0020
CellularRAM Density
64Mb: 0040
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT28C256564W18SBT-F705P70BTWT | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| MT28C256564W18SFT-F606P85TTWT | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| MT28C64432W18ABW-F70P70KTWT | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| MT29C2G24MAKLACG-75IT | SPECIALTY MEMORY CIRCUIT, PBGA152 |
| MT29F4G08BABWP | 512M X 8 FLASH 2.7V PROM, 18 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT28C3212P2FL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3212P2NFL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3214P2FL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3214P2FL-10 BET | 制造商:Micron Technology Inc 功能描述: |
| MT28C3214P2FL-10 BET TR | 制造商:Micron Technology Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。