參數(shù)資料
型號(hào)： MT28C256564W18SBT-F605P85BBWT
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA88
封裝： LEAD FREE, FBGA-88
文件頁(yè)數(shù)： 15/15頁(yè)
文件大?。?/td> 218K
代理商： MT28C256564W18SBT-F605P85BBWT
256Mb MULTIBANK BURST FLASH
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
PRELIMINARY
09005aef80bcd58d
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C256564W18S.fm - Rev. D Pub 2/04 EN
9
2004 Micron Technology. Inc. All rights reserved.
NOTE:
1. Tie this ball to VSS for Flash asynchronous/page non-latched operation. For latched operation, please refer to the
Flash discrete data sheet.
2. Tie this ball to VSS or VCC for Flash asynchronous/page operation.
3. Do not use (DNU) for Flash asynchronous/page operation.
Table 1:
Ball Descriptions
88-BALL FBGA
NUMBERS
SYMBOL
TYPE
DESCRIPTIONS
G1, F1, E1, D1, B1,
C1, F2, E2, F6, D7,
E7, B8, C8, D8, F7,
E8, F8, D2, B2, B3,
E6, B7, C7, C3
A0–A23
Input
Addresses:
Flash: A0–A23.
CellularRAM: A0–A20 (32Mb).
CellularRAM: A0–A21 (64Mb).
K1
F_CE#
Input
Flash Chip Enable.
J2
F_OE#
Input
Flash Output Enable.
F5
F_WE#
Input
Flash Write Enable.
E4
F_WP#
Input
Flash Write Protect.
E5
F_ADV#
Input
Flash Address Valid (burst operation only)1.
C6
F_CLK
Input
Flash Clock (burst operation only)2.
F4
F_RST#
Input
Flash Reset.
C2
C_LB#
Input
CellularRAM Lower Byte Control.
F3
C_UB#
Input
CellularRAM Upper Byte Control.
D5
C_WE#
Input
CellularRAM Write Enable.
H1
C_OE#
Input
CellularRAM Output Enable.
D6
C_CE#
Input
CellularRAM Chip Enable.
K8
C_ZZ#
Input
CellularRAM Deep Sleep Mode and Configuration Mode.
H2, H3, G3, H4, J5,
G5, J6, H7, G2, J3,
G4, J4, H5, G6, H6,
J7
DQ0–DQ15
I/O
Flash/CellularRAM Data Input/Output.
G7
F_WAIT#
Output
Flash WAIT# (burst operation only)3. See “WAIT Ball Operation” on
L7
F_VSS
Supply
Flash Core Ground.
D4
F_VPP
Supply
Flash VPP.
B5, B6, K6, L4
F_VCC
Supply
Flash Core Power Supply.
B4, C4, L1, L5, L8
C_VSS
Supply
CellularRAM Core Ground.
K5
C_VCC
Supply
CellularRAM Core Power Supply.
J8, K7, L3
VCCQ
Supply
Flash/CellularRAM I/O Supply.
L2, L6
VSSQ
Supply
Flash/CellularRAM I/O Ground.
A1, A2, A7, A8, C5,
G8, H8, J1, K2, K3,
K4, M1, M2, M7,
M8
NC
–
No Connect. Not internally connected to the die.
D3, E3
RFU
–
Reserved for Future Use (A24, A25).
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