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參數(shù)資料
| 型號(hào)： | MT46V64M4FG-75Z |
| 元件分類： | DRAM |
| 英文描述： | 64M X 4 DDR DRAM, 0.75 ns, PBGA60 |
| 封裝： | 8 X 14 MM, PLASTIC, FBGA-60 |
| 文件頁(yè)數(shù)： | 1/83頁(yè) |
| 文件大?。?/td> | 2343K |
| 代理商： | MT46V64M4FG-75Z |
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PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
09005aef8076894f
256MBDDRx4x8x16_1.fm - Rev. K 9/04 EN
1
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16
DDR SDRAM
DOUBLE DATA RATE
(DDR) SDRAM
MT46V64M4 – 16 MEG x 4 x 4 BANKS
MT46V32M8 – 8 MEG x 8 x 4 BANKS
MT46V16M16 – 4 MEG x 16 x 4 BANKS
For the latest data sheet revisions, please refer to the
Micron Web site: www.micron.com/datasheets
Features
VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)
Bidirectional data strobe (DQS) transmitted/received
with data, i.e., source-synchronous data capture (x16 has
two – one per byte)
Internal, pipelined double-data-rate (DDR) architecture;
two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-aligned
with data for WRITEs
DLL to align DQ and DQS transitions with CK
Four internal banks for concurrent operation
Data mask (DM) for masking write data (x16 has two – one
per byte)
Programmable burst lengths: 2, 4, or 8
Auto Refresh and Self Refresh Modes
Longer-lead TSOP for improved reliability (OCPL)
2.5V I/O (SSTL_2 compatible)
Concurrent auto precharge option supported
tRAS lockout supported (tRAP = tRCD)
NOTE:
1. Contact Micron for availability of lead-free products.
2. Supports PC3200 modules with 3-3-3 timing
3. Supports PC2700 modules with 2.5-3-3 timing
4. Supports PC2100 modules with 2-2-2 timing
5. Supports PC2100 modules with 2-3-3 timing
6. Supports PC2100 modules with 2.5-3-3 timing
7. Supports PC1600 modules with 2-2-2 timing
8. CL = CAS (READ) Latency
9. Minimum clock rate @ CL = 2 (-75E, -75Z), CL= 2.5 (-6, -6T, -75),
and CL=3(-5B)
OPTIONS
MARKING
Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
64M4
32 Meg x 8 (8 Meg x 8 x 4 banks)
32M8
16 Meg x 16 (4 Meg x 16 x 4 banks)
16M16
Plastic Package – OCPL
66-pin TSOP
TG
66-pin TSOP (lead-free)1
P
Plastic Package
60-Ball FBGA (8mm x 14mm)
FG
60-Ball FBGA (8mm x 14mm) (lead-free)1
BG
Timing – Cycle Time
5ns @ CL=3 (DDR400B)2
-5B
6ns @ CL = 2.5 (DDR333)3(FBGA only)
-6
6ns @ CL = 2.5 (DDR333)3 (TSOP only)
-6T
7.5ns @ CL = 2 (DDR266)4
-75E
7.5ns @ CL = 2 (DDR266A)5
-75Z
7.5ns @ CL = 2.5 (DDR266B)6,7
-75
Self Refresh
Standard
None
Low-Power Self Refresh
L
Temperature Rating
Standard (0
°C to +70°C)
None
Industrial Temperature (-40
°C to +85°C)
IT
Key Timing Parameters
SPEED
GRADE
CLOCK RATE8
DATA-OUT
WINDOW9
ACCESS
WINDOW
DQS–DQ
SKEW
CL = 2 CL = 2.5 CL = 3
-5B
133 MHz 167 MHz 200 MHz
1.6ns
±0.70ns
+0.40ns
-6
133 MHz 167 MHz
N/A
2.1ns
±0.70ns
+0.40ns
6T
133 MHz 167 MHz
N/A
2.0ns
±0.70ns
+0.45ns
-75E/75Z 133 MHz 133 MHz
N/A
2.5ns
±0.75ns
+0.50ns
-75
100 MHz 133 MHz
N/A
2.5ns
±0.75ns
+0.50ns
64 MEG x 4
32 MEG x 8
16 MEG x 16
Configuration
16 Meg x 4 x 4
banks
8 Meg x 8 x 4
banks
4 Meg x 16 x 4
banks
Refresh Count
8K
Row Addressing
8K (A0–A12)
Bank Addressing
4 (BA0,BA1)
Column Addressing
2K (A0–A9,A11)
1K (A0–A9)
512 (A0–A8)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
DNU
VREF
VSS
UDM
CK#
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
x16
VDD
DQ0
VDDQ
DQ1
DQ2
VssQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VssQ
DQ7
NC
VDD
Q
LDQS
NC
VDD
DNU
LDM
WE#
CAS#
RAS#
CS#
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
x16
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
VSSQ
DQS
DNU
VREF
VSS
DM
CK#
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
x8
x4
VSS
NF
VSSQ
NC
DQ3
VDDQ
NC
NF
VSSQ
NC
DQ2
VDDQ
NC
VSSQ
DQS
DNU
VREF
VSS
DM
CK#
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
VDDQ
NC
VDD
DNU
NC
WE#
CAS#
RAS#
CS#
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
x8
x4
VDD
NF
VDDQ
NC
DQ0
VSSQ
NC
NF
VDDQ
NC
DQ1
VSSQ
NC
VDDQ
NC
VDD
DNU
NC
WE#
CAS#
RAS#
CS#
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
Figure 1: Pin Assignment (Top View)
66-Pin TSOP
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| MT46V64M4FJ-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M4FJ-6T | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M4FJ-75Z | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
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