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參數(shù)資料
| 型號： | MT55L512V18PF-6 |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 ZBT SRAM, 3.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, FBGA-165 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MT55L512V18PF-6 |
1
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18P_C.p65 – Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
8Mb
ZBT SRAM
FEATURES
High frequency and 100 percent bus utilization
Fast cycle times: 6ns, 7.5ns and 10ns
Single +3.3V ±5% power supply (VDD)
Separate +3.3V or +2.5V isolated output buffer
supply (VDDQ)
Advanced control logic for minimum control
signal interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs to
eliminate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Pin/function compatibility with 2Mb, 4Mb, and
18Mb ZBT SRAM
Automatic power-down
100-pin TQFP package
165-pin FBGA package
OPTIONS
MARKING
Timing (Access/Cycle/MHz)
3.5ns/6ns/166 MHz
-6
4.2ns/7.5ns/133 MHz
-7.5
5ns/10ns/100 MHz
-10
Configurations
3.3V I/O
512K x 18
MT55L512L18P
256K x 32
MT55L256L32P
256K x 36
MT55L256L36P
2.5V I/O
512K x 18
MT55L512V18P
256K x 32
MT55L256V32P
256K x 36
MT55L256V36P
Package
100-pin TQFP
T
165-pin, 13mm x 15mm FBGA
F*
Operating Temperature Range
Commercial (0C to +70C)
None
Industrial (-40°C to +85°C)**
IT
Part Number Example:
MT55L256L32PT-7.5
MT55L512L18P, MT55L512V18P,
MT55L256L32P, MT55L256V32P,
MT55L256L36P, MT55L256V36P
3.3V VDD, 3.3V or 2.5V I/O
* A Part Marking Guide for the FBGA devices can be found on Micron’s
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).
100-Pin TQFP1
165-Pin FBGA
GENERAL DESCRIPTION
The Micron Zero Bus Turnaround (ZBT) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron’s 8Mb ZBT SRAMs integrate a 512K x 18,
256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L512Y32PF-10 | 制造商:Micron Technology Inc 功能描述: |
| MT55L512Y32PT-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55L512Y32PT-6 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT55L512Y32PT-7.5 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
| MT55L512Y36FT10 | 制造商:Micron Technology Inc 功能描述: |
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