參數(shù)資料
型號(hào): MT57W4MH9CF-6
元件分類: SRAM
英文描述: 4M X 9 DDR SRAM, 0.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 24/29頁
文件大小: 344K
代理商: MT57W4MH9CF-6
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
1.8V VDD, HSTL, DDR SIO SRAM
ADVANCE
36Mb: 1.8V VDD, HSTL, QDRB2 SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT57W2MH18C_B.fm – Rev. B, Pub. 2/03
4
2003 Micron Technology, Inc.
Figure 2: Functional Block Diagram
4 Meg x 8; 4 Meg x 9; 2 Meg x 18; 1 Meg x 36
NOTE:
1. Figure 2 illustrates simplified device operation. See truth table, ball descriptions, and timing diagrams for detailed
information.
2. For 4 Meg x 8, n = 22, a = 8; NWx# = 2 separate nibble writes.
For 4 Meg x 9, n = 22, a = 9; BWx# = 1 separate byte write.
For 2 Meg x 18, n = 21, a = 18; BWx# = 2 separate byte writes.
For 1 Meg x 36, n = 20, a = 36; BWx# = 4 separate byte writes.
ADDRESS
D (Data In)
n
LD#
R/W#
K
K#
a
2a
K#
K
LD#
R/W#
NWx# or BW0#
K
2
n x a
MEMORY
ARRAY
C
ADDRESS
REGISTRY
& LOGIC
DATA
REGISTRY
& LOGIC
C,C#
or
K,K#
a
Q
(Data Out)
R
E
G
2
W
R
I
T
E
MUX
D
R
I
V
E
R
W
R
I
T
E
O
U
T
P
U
T
O
U
T
P
U
T
R
E
G
A
B
U
F
E
R
A
M
P
S
E
N
S
E
O
U
T
P
U
T
S
E
L
E
C
T
2
CQ
CQ#
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