參數(shù)資料
型號(hào): OM11079
廠商: NXP Semiconductors
文件頁(yè)數(shù): 51/57頁(yè)
文件大?。?/td> 0K
描述: MODULE DIMM LPC3250 ARM9
標(biāo)準(zhǔn)包裝: 1
附件類型: 模塊卡
適用于相關(guān)產(chǎn)品: ARM-57TS-LPC3250
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其它名稱: 568-4744
LPC3220_30_40_50
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
55 of 79
NXP Semiconductors
LPC3220/30/40/50
16/32-bit ARM microcontrollers
10.5 ADC static characteristics
[1]
Conditions: VSSA = 0 V (on pin VSS_AD); VDDA(3V3) = 3.3 V (on pin VDD_AD).
[2]
The ADC is monotonic; there are no missing codes.
[3]
The differential linearity error (ED) is the difference between the actual step width and the ideal step width. See Figure 6.
[4]
The integral non-linearity (EL(adj)) is the peak difference between the center of the steps of the actual and the ideal transfer curve after
appropriate adjustment of gain and offset errors. See Figure 6.
[5]
The offset error (EO) is the absolute difference between the straight line which fits the actual curve and the straight line which fits the
ideal curve. See Figure 6.
[6]
The gain error (EG) is the relative difference in percent between the straight line fitting the actual transfer curve after removing offset
error, and the straight line which fits the ideal transfer curve. See Figure 6.
[7]
The absolute error (ET) is the maximum difference between the center of the steps of the actual transfer curve of the non-calibrated
ADC and the ideal transfer curve. See Figure 6.
Table 10.
ADC static characteristics
VDDA(3V3) =3.3 V; Tamb =25C unless otherwise specified; ADC clock frequency 4.5 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIA
analog input voltage
0
-
VDDA(3V3)
V
Cia
analog input capacitance
-
1
pF
ED
differential linearity error
0.5
1LSB
EL(adj)
integral non-linearity
0.6
1LSB
EO
offset error
1
3LSB
EG
gain error
0.3
0.6
%
ET
absolute error
4LSB
Rvsi
voltage source interface resistance
-
40
k
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